Characteristics of GaSb growth using various gallium and antimony precursors

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 55-60

  Wang, C A ^a   Salim, S ^a,b,c   Jensen, K F ^c   Jones, A C ^d  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b PRAXAIR INC   (United States)

^c Massachusetts Institute of Technology   (United States)

^d Epichem Limited   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; ORGANOMETALLICS; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SURFACE PROPERTIES;

SEMICONDUCTOR GALLIUM ANTIMONIDE; SURFACE DEFECTS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030645405     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00580-5     Document Type: Article

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