Organometallic vapor phase epitaxy of n-GaSb and n-GaInAsSb for low resistance ohmic contacts

Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 379-384

  Wang, C A ^a   Shiau, D A ^a   Huang, R K ^a   Harris, C T ^a   Connors, M K ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

A1. Doping; A3. Organometallic vapor phase epitaxy; B1. GaInAsSb; B1. GaSb; B3. Ohmic contacts

Indexed keywords

CHEMICAL ACTIVATION; ELECTRIC RESISTANCE; ELECTRON BEAM LITHOGRAPHY; METALLIZING; MONOLITHIC INTEGRATED CIRCUITS; OHMIC CONTACTS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECTS; POWER ELECTRONICS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; TELLURIUM; THERMOELECTRICITY;

EPILAYERS; SPECIFIC CONTACT RESISTIVITY; THERMOPHOTOVOLTAIC (TPV) CELLS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0346785323     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.031     Document Type: Conference Paper

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