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Journal of Crystal Growth

Volumn 169, Issue 3, 1996, Pages 417-423

Metalorganic vapor phase epitaxial growth of AlGaSb and AlGaAsSb using all-organometallic sources

(4) Koljonen, T a Sopanen, M a Lipsanen, H a Tuomi, T a

a AALTO UNIVERSITY (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ATMOSPHERIC PRESSURE; CHARGE CARRIERS; COMPOSITION EFFECTS; CRYSTAL LATTICES; GALLIUM COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

ARSENIC DISTRIBUTION COEFFICIENT; TERTIARYBUTYLARSINE; TRIMETHYL COMPOUNDS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0030385657 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00445-9 Document Type: Article

Times cited : (15)

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