High-performance GaInAsSb thermophotovoltaic devices with an AIGaAsSb window

Applied Physics Letters

Volumn 71, Issue 26, 1997, Pages 3758-3760

  Choi, H K ^a   Wang, C A ^a   Turner, G W ^a   Manfra, M J ^a   Spears, D L ^a   Charache, G W ^b   Danielson, L R ^b   Depoy, D M ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b LOCKHEED MARTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

OPEN CIRCUIT VOLTAGE; THERMOPHOTOVOLTAIC DEVICES;

PHOTOVOLTAIC CELLS;

EID: 0031367322     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120497     Document Type: Article

References (12)

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