Growth of InAs/GaSb strained layer superlattices by MOVPE III. Use of UV absorption to monitor alkyl stability in the reactor

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 777-782

  Booker, G R ^a   Daly, M ^a   Klipstein, P C ^a   Lakrimi, M ^a   Kuech, T F ^b   Li, Jiang ^b   Lyapin, S G ^a   Mason, N J ^a   Murgatroyd, I J ^a   Portal, J C ^c,d   Nicholas, R J ^a   Symons, D M ^a   Vicente, P ^a   Walker, P J ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b University of Wisconsin Madison   (United States)

^c INSA   (France)

^d CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; RAMAN SCATTERING; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUPERLATTICES; SURFACE STRUCTURE; ULTRAVIOLET RADIATION;

QUANTUM TRANSPORT EFFECTS; SURFACE MORPHOLOGY;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030677163     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00578-7     Document Type: Article

References (13)

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