Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding

Applied Physics Letters

Volumn 78, Issue 15, 2001, Pages 2232-2234

  Moran, P D ^a   Chow, D ^b   Hunter, A ^b   Kuech, T F ^a  

^a Wisconsin Electric Machines and Power Electronics Consortium   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035831840     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1359140     Document Type: Article

References (8)

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