Non-contact determination of free carrier concentration in n-GaInAsSb

Materials Research Society Symposium - Proceedings

Volumn 799, Issue , 2003, Pages 167-172

  Maslar, James E ^a   Hurst, Wilbur S ^a   Wang, Christine A ^b   Shiau, Daniel A ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL LATTICES; ELECTRIC EXCITATION; ELECTRON MOBILITY; ENERGY GAP; EPITAXIAL GROWTH; HALL EFFECT; INTERFACES (MATERIALS); MAGNETIC FIELD EFFECTS; OPTIMIZATION; OPTOELECTRONIC DEVICES; RAMAN SPECTROSCOPY;

ELECTRICAL CHARACTERIZATION; EPILAYERS; LATTICE MISMATCH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 3042554734     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-799-z3.5     Document Type: Conference Paper

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