Epitaxial growth of GalnAsSb for thermophotovoltaic devices

IEE Proceedings: Optoelectronics

Volumn 147, Issue 3, 2000, Pages 193-198

  Wang, C A ^a   Choi, H K ^a   Charache, G W ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; PHOTOVOLTAIC CELLS; QUANTUM EFFICIENCY; REACTION KINETICS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

THERMOPHOTOVOLTAIC DEVICES;

INTEGRATED OPTOELECTRONICS;

EID: 0034206627     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20000480     Document Type: Article

References (15)

1. BALDASARO, P.P., BROWN, E.J., DEPOY, D.M., CAMPBELL, B.C., and PARRINGTON, J.R.: 'Experimental assessment of low temperature voltaic energy conversion'. AIP Conference Proceedings, 1995, 321, pp. 29-43
2. CHARACHE, G.W., BALDASARO, RE, DANIELSON, L.R., DEPOY, D.M., FREEMAN, M.J., WANG, C.A., CHOI, U.K., GARBAZOV, D.Z., MARTINELLI, R.U, KHALFIN, V, SAROOP, S., BORREGO, J.M., and GUTMANN, R.J.: 'InGaAsSb thermophotovoltaic diode: Physics evaluation', J. Appl. Phvs., 1999, 85, (4), pp. 2247-2252
3. DEWINTER, J.C., POLLOCK, M.A., SRIVASTAVA, A.K., and ZYSKIND, J.L.: 'Liquid phase epitaxial Ga,_xInxAsySb|_y latticematched to (100) GaSb over the 1.71 to 2.33/im wavelength range',./ Electron. Mater., 1985, 14, (6), pp. 729-747
4. CHERNG, M.J., JEN, H.R., LARSEN, C.A., STRINGFELLOW, G.B., LUNDT, H., and TAYLOR, P.C.: 'MOVPE growth of GalnAsSb', J. Cryst. Growth, 1986, 77, pp. 408-417
5. WANG, C.A., CHOI, U.K., OAKLEY, D.C., and CHARACHE, G.W.: 'Recent progress in GalnAsSb thermophotovoltaics grown by organometallic vapor phase epitaxy', J. Cryst. Growth., 1998, 195, (1-), pp. 346-355
6. CHOI, H.K., EGLASH, S.J., and TURNER, G.W.: 'Double-heterostructure diode lasers emitting at 3/im with metastable GalnAsSb active layer and AlGaAsSb cladding layers', Appl. Phys. Lett., 1994, 64, (19), pp. 2474-2476
7. STRINGFELLOW, G.B.: 'Organometallic vapor phase epitaxy: theory and practice' (Academic Press, San Diego, CA, 1999)
8. WANG, C.A.: 'OMVPE growth of GalnAsSb in the 2-2.4 /im range', J. Cryst. Growth, 1998, 191, pp. 631-640
9. KASU, M., and KOBAYASHI, N.: 'Equilibrium multiatomic step structure of GaAs(OOl) vicinal surfaces grown by metalorganic chemical vapor deposition', Appl. Phys. Lett., 1993, 62, (11), pp. 1262-1264
10. SHINOHARA, M., and INOUE, N.: 'Behavior and mechanism of step bunching during metalorganic vapor phase epitaxy of GaAs', Appl. Phys. Lett., 1995, 66, (15), pp. 1936-1938
11. WANG, C.A.: 'Step structure of GalnAsSb grown by organometallic vapor phase epitaxy', J. Electron. Mater., 2000, 29, (1), pp. 112-117
12. WANG, C.A.: 'Correlation between surface step structure and phase separation in epitaxial GalnAsSb', Appl. Phys. Lett., 2000, 76, (15), pp. 2077-2079
13. WANG, C.A., CHOI, H.K., RANSOM, S.L., CHARACHE, G.W., DANIELSON, L.R., and DEPOY, D.M.: 'High-quantum-efficiency 0.5 eV GalnAsSb/GaSb thermophotovoltaic devices', Appl. Phys. Lett., 1999, 75, (9), pp. 1305-1307
14. HITCHCOCK, C.W., GUTMANN, R.J., EHSANI, H., BHAT, I.E., WANG, C.A., FREEMAN, M.J., and CHARACHE, G.W.: 'Ternary and quaternary antimonide devices for thermophotovoltaic applications', J. Cryst. Growth, 1998, 195, (1-4), pp. 363-372
15. CHOI, H.K., WANG, C.A., TURNER, G.W., MANFRA, M.J., SPEARS, D.L., CHARACHE, G.W., DANIELSON, L.R., and DEPOY, D.M.: 'High-performance GalnAsSb thermophotovoltaic devices with an AlGaAsSb window', Appl. Phys. Lett., 1997, 71, (26), pp. 3758-3760