Reduction of interfacial recombination in GaInAsSb/GaSb double heterostructures

Applied Physics Letters

Volumn 81, Issue 25, 2003, Pages 4769-4771

  Donetsky, D ^a   Anikeev, S ^a   Belenky, G ^a   Luryi, S ^a   Wang, C A ^b   Nichols, G ^c  

^a STONY BROOK UNIVERSITY   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c LOCKHEED MARTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

VALENCE BAND;

HETEROJUNCTIONS;

EID: 0037449290     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1530743     Document Type: Article

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