OMVPE growth of GaInAsSb in the 2-2.4 μm range

Journal of Crystal Growth

Volumn 191, Issue 4, 1998, Pages 631-640

  Wang, C A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; COMPOSITION EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; ORGANOMETALLICS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TELLURIUM COMPOUNDS; THERMAL EFFECTS; ZINC COMPOUNDS;

TRIETHYLGALLIUM; TRIMETHYLINDIUM;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032141120     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00367-4     Document Type: Article

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