-
1
-
-
0035872897
-
High-κ gate dielectrics: Current status and materials properties considerations
-
G.D. Wilk, R.M. Wallace, and J.M. Anthony. High-κ gate dielectrics: Current status and materials properties considerations. J. Appl. Phys. 89, 5243 (2001).
-
(2001)
J. Appl. Phys.
, vol.89
, pp. 5243
-
-
Wilk, G.D.1
Wallace, R.M.2
Anthony, J.M.3
-
2
-
-
0042341502
-
GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
-
P.D. Ye, G.D. Wilk, B. Yang, J. Kwo, S.N.G. Chu, S. Nakahara, H.-J.L. Gossmann, J.P. Mannaerts, M. Hong, K.K. Ng, and J. Bude. GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition. Appl. Phys. Lett. 83, 180 (2003).
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 180
-
-
Ye, P.D.1
Wilk, G.D.2
Yang, B.3
Kwo, J.4
Chu, S.N.G.5
Nakahara, S.6
Gossmann, H.-J.L.7
Mannaerts, J.P.8
Hong, M.9
Ng, K.K.10
Bude, J.11
-
3
-
-
4444250961
-
4/surface passivation
-
4/surface passivation. IEEE Electron Device Lett. 25, 631 (2004).
-
(2004)
IEEE Electron Device Lett
, vol.25
, pp. 631
-
-
Wu, N.1
Zhang, Q.2
Zhu, C.3
Chan, D.S.H.4
Du, A.5
Balasubramanian, N.6
Li, M.F.7
Chin, A.8
Sin, J.K.O.9
Kwong, D.-L.10
-
5
-
-
2442545521
-
2 films grown by atomic layer deposition on Si, Ge, GaAs and GaN
-
E6.14
-
2 films grown by atomic layer deposition on Si, Ge, GaAs and GaN. Mater. Res. Soc. Symp. Proc. Vol. 786, E6.14 (2004).
-
(2004)
Mater. Res. Soc. Symp. Proc.
, vol.786
-
-
Fanciulli, M.1
Spiga, S.2
Scarel, G.3
Tallarida, G.4
Wiemer, C.5
Seguini, G.6
-
6
-
-
7044235397
-
2 gate dielectric deposited on Ge(100)
-
2 gate dielectric deposited on Ge(100). Appl. Phys. Lett. 85, 2334 (2004).
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 2334
-
-
Gusev, E.P.1
Shang, H.2
Copel, M.3
Gribelyuk, M.4
D’Emic, C.5
Kozlowski, P.6
Zabel, T.7
-
8
-
-
20444484490
-
Atomic layer deposition of hafnium oxide on germanium substrates
-
A. Delabie, R.L. Puurunen, B. Brijs, M. Caymax, T. Conard, B. Onsia, O. Richard, W. Vandervorst, C. Zhao, M.M. Heyns, and M. Meuris. Atomic layer deposition of hafnium oxide on germanium substrates. J. Appl. Phys. 97, 064104 (2005).
-
(2005)
J. Appl. Phys.
, vol.97
-
-
Delabie, A.1
Puurunen, R.L.2
Brijs, B.3
Caymax, M.4
Conard, T.5
Onsia, B.6
Richard, O.7
Vandervorst, W.8
Zhao, C.9
Heyns, M.M.10
Meuris, M.11
-
10
-
-
19944415607
-
Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n-and p-FETs on Ge-On-Insulator substrates
-
B. De Jaeger, R. Bonzom, F. Leys, O. Richard, J. Van Steenbergen, G. Wind-erickx, E. Van Moorhem, G. Raskin, F. Letertre, T. Billon, M. Meuris, and M. Heyns. Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n-and p-FETs on Ge-On-Insulator substrates. Microelectron. Eng. 80, 26 (2005).
-
(2005)
Microelectron. Eng.
, vol.80
, pp. 26
-
-
de Jaeger, B.1
Bonzom, R.2
Leys, F.3
Richard, O.4
Steenbergen, J.V.5
Wind-Erickx, G.6
Moorhem, E.V.7
Raskin, G.8
Letertre, F.9
Billon, T.10
Meuris, M.11
Heyns, M.12
-
11
-
-
19944393665
-
2 Gate stack
-
, p
-
2 Gate stack. IEEE IEDM 2004 Technical Digest 2004, p. 307 (2004).
-
(2004)
IEEE IEDM 2004 Technical Digest 2004
, pp. 307
-
-
Whang, S.J.1
Lee, S.J.2
Gao, F.3
Wu, N.4
Zhu, C.X.5
Pan, J.S.6
Tang, L.J.7
Kwong, D.-L.8
-
12
-
-
2442501598
-
Atomic layer deposition of high-κ dielectric for germanium MOS applications – substrate
-
C.O. Chui, H. Kim, P.C. McIntyre, and K.C. Saraswat. Atomic layer deposition of high-κ dielectric for germanium MOS applications – substrate. IEEE Electron Device Lett. 25, 274 (2004).
-
(2004)
IEEE Electron Device Lett
, vol.25
, pp. 274
-
-
Chui, C.O.1
Kim, H.2
McIntyre, P.C.3
Saraswat, K.C.4
-
13
-
-
19944434145
-
2 deposited on Ge substrates by MOCVD
-
. Vol. , B5.4.1/D5.4.1
-
2 deposited on Ge substrates by MOCVD. Mater. Res. Soc. Symp. Proc. Vol. 809, B5.4.1/D5.4.1 (2004).
-
(2004)
Mater. Res. Soc. Symp. Proc
, vol.809
-
-
van Elshocht, S.1
Brijs, B.2
Caymax, M.3
Conrad, T.4
de Gendt, S.5
Kubicek, S.6
Meuris, M.7
Onsia, B.8
Richard, O.9
Teerlinck, I.10
van Steenbergen, J.11
Zhao, C.12
Heyns, M.13
-
14
-
-
2942581439
-
2 films on Ge substrate
-
2 films on Ge substrate. Appl. Phys. Lett. 84, 3741 (2004).
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 3741
-
-
Wu, N.1
Zhang, Q.2
Zhu, C.3
Yeo, C.C.4
Whang, S.J.5
Chan, D.S.H.6
Li, M.F.7
Cho, B.J.8
Chin, A.9
Kwong, D.-L.10
Du, A.Y.11
Tung, C.H.12
Balasubramanian, N.13
-
15
-
-
10044277098
-
Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-κ gate dielectric
-
N. Wu, Q. Zhang, C. Zhu, D.S.H. Chan, M.F. Li, N. Balasubramanian, A. Chin, and D.-L. Kwong. Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-κ gate dielectric. Appl. Phys. Lett. 85, 4127 (2004).
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 4127
-
-
Wu, N.1
Zhang, Q.2
Zhu, C.3
Chan, D.S.H.4
Li, M.F.5
Balasubramanian, N.6
Chin, A.7
Kwong, D.-L.8
-
16
-
-
33645508747
-
2 dielectric
-
2 dielectric. Appl. Phys. Lett. 87, 051922 (2005).
-
(2005)
Appl. Phys. Lett.
, vol.87
-
-
Lu, N.1
Bai, W.2
Ramirez, A.3
Mouli, C.4
Ritenour, A.5
Lee, M.L.6
Antoniadis, D.7
Kwong, D.L.8
-
17
-
-
20544468992
-
Si interlayer passivation on germanium MOS capacitors with high-κ dielectric and metal gate
-
W.P. Bai, N. Lu, and D.-L. Kwong. Si interlayer passivation on germanium MOS capacitors with high-κ dielectric and metal gate. IEEE Electron Device Lett. 26, 378 (2005).
-
(2005)
IEEE Electron Device Lett
, vol.26
, pp. 378
-
-
Bai, W.P.1
Lu, N.2
Kwong, D.-L.3
-
21
-
-
4444296234
-
2 gate dielectrics on surface-nitrided Ge
-
2 gate dielectrics on surface-nitrided Ge. IEEE Tans. Electron Device 51, 1441 (2004).
-
(2004)
. IEEE Tans. Electron Device
, vol.51
, pp. 1441
-
-
Chen, J.J.-H.1
Bojarczuk, N.A.2
Shang, H.3
Copel, M.4
Hannon, J.B.5
Karasinski, J.6
Preisler, E.7
Banerjee, S.K.8
Guha, S.9
-
22
-
-
19944384938
-
y gate dielectric on Ge substrate
-
y gate dielectric on Ge substrate. Microelectron. Eng. 80, 30 (2005).
-
(2005)
Microelectron. Eng.
, vol.80
, pp. 30
-
-
Cheng, C.-C.1
Chien, C.-H.2
Chen, C.-W.3
Hsu, S.-L.4
Yang, M.-Y.5
Huang, C.-C.6
Yang, F.-L.7
Chang, C.-Y.8
-
24
-
-
0036687234
-
Germanium MOS capacitors incorporating ultrathin high-κ gate dielectric
-
C.O. Chui, S. Ramanathan, B.B. Triplett, P.C. McIntyre, and K. C. Saraswat. Germanium MOS capacitors incorporating ultrathin high-κ gate dielectric. IEEE Electron Device Lett. 23, 473 (2002).
-
(2002)
IEEE Electron Device Lett
, vol.23
, pp. 473
-
-
Chui, C.O.1
Ramanathan, S.2
Triplett, B.B.3
McIntyre, P.C.4
Saraswat, K.C.5
-
25
-
-
3142703166
-
Zirconia grown by ultraviolet ozone oxidation on germanium (100) substrates
-
D. Chi, C.O. Chui, K.C. Saraswat, B.B. Triplett, and P.C. McIntryre. Zirconia grown by ultraviolet ozone oxidation on germanium (100) substrates. J. Appl. Phys. 96, 813 (2004).
-
(2004)
J. Appl. Phys.
, vol.96
, pp. 813
-
-
Chi, D.1
Chui, C.O.2
Saraswat, K.C.3
Triplett, B.B.4
McIntryre, P.C.5
-
26
-
-
1642352532
-
3/-Ge-on-insulator n-and p-MOSFETs with fully NiSi and NiGe dual gates
-
3/-Ge-on-insulator n-and p-MOSFETs with fully NiSi and NiGe dual gates. IEEE Electron Device Lett. 25, 138 (2004).
-
(2004)
IEEE Electron Device Lett
, vol.25
, pp. 138
-
-
Yu, D.S.1
Huang, C.H.2
Chin, A.3
Zhu, C.4
Li, M.F.5
Cho, B.J.6
Kwong, D.-L.7
-
27
-
-
0033874391
-
Experiments in MIS structure based on germanium and improvements of the interfacial properties
-
Z. Benamara, S. Tizi, M. Chellali, and B. Gruzza. Experiments in MIS structure based on germanium and improvements of the interfacial properties. Mater. Chem. Phys. 62, 273 (2000).
-
(2000)
Mater. Chem. Phys.
, vol.62
, pp. 273
-
-
Benamara, Z.1
Tizi, S.2
Chellali, M.3
Gruzza, B.4
-
28
-
-
85103585653
-
Experimental determination of the band offset of rare earth oxides on different semiconductors
-
M. Fanciulli and G. Scarel, Springer, Berlin Heidelberg New York
-
G. Seguini, M. Perego, and M. Fanciulli. Experimental determination of the band offset of rare earth oxides on different semiconductors, in “Rare Earth Oxide Thin Films: Growth, Characterization, and Applications”, Eds. M. Fanciulli and G. Scarel, Springer, Berlin Heidelberg New York (2006).
-
(2006)
Rare Earth Oxide Thin Films: Growth, Characterization, and Applications
-
-
Seguini, G.1
Perego, M.2
Fanciulli, M.3
-
29
-
-
85103573893
-
Electrically active interface and bulk semiconductor defects in high-κ/germanium structures
-
Ed. E. Gusev, Springer Berlin Heidelberg New York (2006)
-
A. Dimoulas. Electrically active interface and bulk semiconductor defects in high-κ/germanium structures, in Defects in Advanced High-κ Dielectric Nano-Electronic Semiconductor Devices, Ed. E. Gusev, Springer Berlin Heidelberg New York (2006)
-
Defects in Advanced High-κ Dielectric Nano-Electronic Semiconductor Devices
-
-
Dimoulas, A.1
-
30
-
-
85103595978
-
-
Eds. M. Fanciulli and G. Scarel, Springerm Berlin Heidelberg New York (2006)
-
A. Dimoulas. Rare earth oxides grown by molecular beam epitaxy for ultimate scaling, in Rare Earth Oxide Thin Films: Growth, Characterization, and Applications, Eds. M. Fanciulli and G. Scarel, Springerm Berlin Heidelberg New York (2006).
-
Rare Earth Oxides Grown by Molecular Beam Epitaxy for Ultimate Scaling, in Rare Earth Oxide Thin Films: Growth, Characterization, and Applications
-
-
Dimoulas, A.1
-
32
-
-
0141633668
-
3 as the oxidant
-
3 as the oxidant. J. Appl. Phys. 94, 3641 (2003).
-
(2003)
J. Appl. Phys.
, vol.94
, pp. 3641
-
-
Park, H.B.1
Cho, M.2
Park, J.3
Lee, S.W.4
Hwang, C.S.5
Kim, J.-P.6
Lee, J.-H.7
Lee, N.-H.8
Kang, H.-K.9
Lee, J.-C.10
Oh, S.-J.11
-
33
-
-
0037382841
-
Advances in high-κ gate dielectrics for Si and III–V semiconductors
-
J. Kwo, M. Hong, B. Busch, D.A. Muller,Y.J. Chabal, A.R. Kortan, J.P. Mannaerts, B. Yang, P. Ye, H. Gossmann, A.M. Sergent, K.K. Ng, J. Bude, W.H. Schlte, E. Garfunkel, and T. Gustafsson. Advances in high-κ gate dielectrics for Si and III–V semiconductors. J. Cryst. Growth 251, 645 (2003).
-
(2003)
J. Cryst. Growth
, vol.251
, pp. 645
-
-
Kwo, J.1
Hong, M.2
Busch, B.3
Muller, D.A.4
Chabal, Y.J.5
Kortan, A.R.6
Mannaerts, J.P.7
Yang, B.8
Ye, P.9
Gossmann, H.10
Sergent, A.M.11
Ng, K.K.12
Bude, J.13
Schlte, W.H.14
Garfunkel, E.15
Gustafsson, T.16
-
34
-
-
0043020666
-
High-κ gate dielectrics for Si and compound semiconductors by molecular beam epitaxy
-
. Vol. , N8.1.1/T6.1.1
-
J.R. Kwo and M. Hong. High-κ gate dielectrics for Si and compound semiconductors by molecular beam epitaxy. Mater. Res. Soc. Symp. Proc. Vol. 745, N8.1.1/T6.1.1 (2003).
-
(2003)
Mater. Res. Soc. Symp. Proc
, vol.745
-
-
Kwo, J.R.1
Hong, M.2
-
35
-
-
0032615339
-
Passivation of GaAs using (Ga 2O3)1−x(Gd2O3)x, 0 < x < 1.0 films
-
J. Kwo, D.W. Murphy, M. Hong, R.L. Opila, J.P. Mannaerts, A. M. Sergent, and R.L. Masaitis. Passivation of GaAs using (Ga 2O3)1−x(Gd2O3)x, 0 < x < 1.0 films. Appl. Phys. Lett. 75, 1116 (1999).
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 1116
-
-
Kwo, J.1
Murphy, D.W.2
Hong, M.3
Opila, R.L.4
Mannaerts, J.P.5
Sergent, A.M.6
Masaitis, R.L.7
-
36
-
-
0012426898
-
Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy
-
M. Hong. Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy. J. Vac. Sci. Technol. B 14, 2297 (1996).
-
(1996)
J. Vac. Sci. Technol. B
, vol.14
, pp. 2297
-
-
Hong, M.1
-
37
-
-
21544434997
-
Unpinned gallium ox-ide/GaAs interface by hydrogen and nitrogen surface plasma treatment
-
A. Callegari, P.D. Hoh, D.A. Buchanan, and D. Lacey. Unpinned gallium ox-ide/GaAs interface by hydrogen and nitrogen surface plasma treatment. Appl. Phys. Lett. 54, 332 (1989).
-
(1989)
Appl. Phys. Lett.
, vol.54
, pp. 332
-
-
Callegari, A.1
Hoh, P.D.2
Buchanan, D.A.3
Lacey, D.4
-
39
-
-
0031075990
-
3–GaAs interfaces: Fabrication, characterization, and modelling
-
3–GaAs interfaces: Fabrication, characterization, and modelling. IEEE Trans. Electron Devices 44, 214 (1997).
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, pp. 214
-
-
Passlack, M.1
Hong, M.2
Mannaerts, J.P.3
Opila, R.L.4
Chu, S.N.G.5
Moriya, N.6
Ren, F.7
Kwo, J.R.8
-
41
-
-
0033583043
-
Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation
-
M. Hong, J. Kwo, A.R. Kortan, J.P. Mannaerts, and A.M. Sergent. Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation. Science 283, 1897 (1999).
-
(1999)
Science
, vol.283
, pp. 1897
-
-
Hong, M.1
Kwo, J.2
Kortan, A.R.3
Mannaerts, J.P.4
Sergent, A.M.5
-
42
-
-
22644449309
-
Passivation of GaAs using gallium–gadolinium oxides
-
J. Kwo, D.W. Murphy, M. Hong, J.P. Mannaerts, R.L. Opila, R. L. Masaitis, and A.M. Sergent. Passivation of GaAs using gallium–gadolinium oxides. J. Vac. Sci. Technol. B 17, 1294 (1999).
-
(1999)
J. Vac. Sci. Technol. B
, vol.17
, pp. 1294
-
-
Kwo, J.1
Murphy, D.W.2
Hong, M.3
Mannaerts, J.P.4
Opila, R.L.5
Masaitis, R.L.6
Sergent, A.M.7
-
43
-
-
0000017076
-
Initial growth of Ga 2O3(Gd 2O3) on GaAs: Key to the attainment of a low interfacial density of states
-
M. Hong, Z.H. Lu, J. Kwo, A.R. Kortan, J.P. Mannaerts, J.J. Krajewski, K.C. Hsieh, L.J. Chou, and K.Y. Cheng. Initial growth of Ga 2O3(Gd 2O3) on GaAs: Key to the attainment of a low interfacial density of states. Appl. Phys. Lett. 76, 312 (2000).
-
(2000)
Appl. Phys. Lett.
, vol.76
, pp. 312
-
-
Hong, M.1
Lu, Z.H.2
Kwo, J.3
Kortan, A.R.4
Mannaerts, J.P.5
Krajewski, J.J.6
Hsieh, K.C.7
Chou, L.J.8
Cheng, K.Y.9
-
44
-
-
0942277725
-
3 template thickness and gadolinium mole fraction in Gd xGa 0.4−xO0.6/Ga 2O3 gate dielectric stacks on GaAs
-
3 template thickness and gadolinium mole fraction in Gd xGa 0.4−xO0.6/Ga 2O3 gate dielectric stacks on GaAs. Appl. Phys. Lett. 83, 5262 (2003).
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 5262
-
-
Passlack, M.1
Medendorp, N.2
Gregory, R.3
Braddock, D.4
-
45
-
-
31144469815
-
Development methodology for high-κ gate dielectrics on III–V semiconductors: Gd xGa 0.4−xO0.6/Ga 2O3 dielectric stacks on GaAs
-
M. Passlack. Development methodology for high-κ gate dielectrics on III–V semiconductors: Gd xGa 0.4−xO0.6/Ga 2O3 dielectric stacks on GaAs. J. Vac. Sci. Technol. B 23, 1773 (2005).
-
(2005)
J. Vac. Sci. Technol. B
, vol.23
, pp. 1773
-
-
Passlack, M.1
-
46
-
-
19944418278
-
Gate dielectrics on compound semiconductors
-
R. Droopad, M. Passlack, N. England, K. Rajagopalan, J. Abrokwah, and A. Kummel. Gate dielectrics on compound semiconductors. Microelectonic Eng. 80, 138 (2005).
-
(2005)
Microelectonic Eng
, vol.80
, pp. 138
-
-
Droopad, R.1
Passlack, M.2
England, N.3
Rajagopalan, K.4
Abrokwah, J.5
Kummel, A.6
-
47
-
-
36449009451
-
Growth of epitaxial MgO films on Sb-passivated (001)GaAs: Properties of the MgO/GaAs interface
-
E.J. Tarsa, X.H. Wu, J.P. Ibbetson, J.S. Speck, and J.J. Zinck. Growth of epitaxial MgO films on Sb-passivated (001)GaAs: Properties of the MgO/GaAs interface. Appl. Phys. Lett. 66, 3588 (1995).
-
(1995)
Appl. Phys. Lett.
, vol.66
, pp. 3588
-
-
Tarsa, E.J.1
Wu, X.H.2
Ibbetson, J.P.3
Speck, J.S.4
Zinck, J.J.5
-
48
-
-
4444233501
-
Hetero-epitaxy of perovskite oxides on GaAs(001) by molecular beam epitaxy
-
Y. Liang, J. Kulik, T.C. Eschrich, R. Droopad, Z. Yu, and P. Maniar. Hetero-epitaxy of perovskite oxides on GaAs(001) by molecular beam epitaxy. Appl. Phys. Lett. 85, 1217 (2004).
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 1217
-
-
Liang, Y.1
Kulik, J.2
Eschrich, T.C.3
Droopad, R.4
Yu, Z.5
Maniar, P.6
-
50
-
-
0035271904
-
2 thin films by pulsed laser deposition on GaAs(100) substrates
-
2 thin films by pulsed laser deposition on GaAs(100) substrates. J. Vac. Sci. Technol. A 19, 391 (2001).
-
(2001)
J. Vac. Sci. Technol. A
, vol.19
, pp. 391
-
-
Liu, X.1
Chen, X.Y.2
Yin, J.3
Liu, Z.G.4
Liu, J.M.5
Yin, X.B.6
Chen, G.X.7
Wang, M.8
-
51
-
-
0035440121
-
Growth of NiO films on various GaAs faces via electron bombardment evaporation
-
K. Nishita, A. Koma, and K. Saiki. Growth of NiO films on various GaAs faces via electron bombardment evaporation. J. Vac. Sci. Technol. A 19, 2282 (2001).
-
(2001)
J. Vac. Sci. Technol. A
, vol.19
, pp. 2282
-
-
Nishita, K.1
Koma, A.2
Saiki, K.3
-
52
-
-
0000455487
-
Metal-insulator-semiconductor structures on p-type GaAs with low interface state density
-
Z. Chen, D.-G. Park, F. Stengal, S. Noor Mohammad, and H. Morkoç. Metal-insulator-semiconductor structures on p-type GaAs with low interface state density. Appl. Phys. Lett. 69, 230 (1996).
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 230
-
-
Chen, Z.1
Park, D.-G.2
Stengal, F.3
Noor Mohammad, S.4
Morkoç, H.5
-
53
-
-
0038007876
-
Pinning-free GaAs MIS structures with Si interface control layers formed on (4×6) reconstructed (001) surface
-
S. Anantathanasarn and H. Hasegawa. Pinning-free GaAs MIS structures with Si interface control layers formed on (4×6) reconstructed (001) surface. Appl. Surf. Sci. 216, 275 (2003).
-
(2003)
Appl. Surf. Sci.
, vol.216
, pp. 275
-
-
Anantathanasarn, S.1
Hasegawa, H.2
-
55
-
-
0001702478
-
In-vacuum cleaving and coating of semiconductor laser facets using thin silicon and a dielectric
-
L. Wu. Tu, E.F. Schubert, M. Hong, and G.J. Zydzik. In-vacuum cleaving and coating of semiconductor laser facets using thin silicon and a dielectric. J. Appl. Phys. 80, 6448 (96).
-
J. Appl. Phys.
, vol.80
, Issue.96
, pp. 6448
-
-
Tu, L.Wu.1
Schubert, E.F.2
Hong, M.3
Zydzik, G.J.4
-
56
-
-
20844440321
-
3 gate dielectrics on GaAs grown by atomic layer deposition
-
3 gate dielectrics on GaAs grown by atomic layer deposition. Appl. Phys. Lett. 86, 152904 (2005).
-
(2005)
Appl. Phys. Lett.
, vol.86
-
-
Frank, M.M.1
Wilk, G.D.2
Starodub, D.3
Gustafsson, T.4
Garfunkel, E.5
Chabal, Y.J.6
Grazul, J.7
Muller, D.A.8
-
58
-
-
0037766787
-
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
-
P.D. Ye, G.D. Wilk, J. Kwo, B. Yang, H.-J.L. Gossmann, M. Frei, S.N.G. Chu, J.P. Mannaerts, M. Sergent, M. Hong, K.K. Ng, and J. Bude. GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition. IEEE. Electron Device Lett. 24, 209 (2003).
-
(2003)
IEEE. Electron Device Lett.
, vol.24
, pp. 209
-
-
Ye, P.D.1
Wilk, G.D.2
Kwo, J.3
Yang, B.4
Gossmann, H.-J.L.5
Frei, M.6
Chu, S.N.G.7
Mannaerts, J.P.8
Sergent, M.9
Hong, M.10
Ng, K.K.11
Bude, J.12
-
59
-
-
0032682630
-
Atomic layer epitaxy-a valuable tool for nanotechnology?
-
M. Ritala and M. Leskelä. Atomic layer epitaxy-a valuable tool for nanotechnology? Nanotechnology 10, 19 (1999).
-
(1999)
Nanotechnology
, vol.10
, pp. 19
-
-
Ritala, M.1
Leskelä, M.2
-
60
-
-
0141569647
-
Optimization and characterization of III–V surface cleaning
-
Z. Liu, Y. Sun, F. Machuca, P. Pianetta, W.E. Spider, and R.F. W. Pease. Optimization and characterization of III–V surface cleaning. J. Vac. Sci. Technol. B 21, 1953 (2003).
-
(2003)
J. Vac. Sci. Technol. B
, vol.21
, pp. 1953
-
-
Liu, Z.1
Sun, Y.2
Machuca, F.3
Pianetta, P.4
Spider, W.E.5
Pease, R.F.W.6
-
62
-
-
0000876411
-
2 thin films
-
2 thin films. Chem. Vap. Dep. 8, 163 (2002).
-
(2002)
Chem. Vap. Dep.
, vol.8
, pp. 163
-
-
Williams, P.A.1
Roberts, J.L.2
Jones, A.C.3
Chalker, P.R.4
Tobin, N.L.5
Bick-Ley, J.F.6
Davies, H.O.7
Smith, L.M.8
Leedham, T.J.9
-
64
-
-
4043099571
-
3
-
3. Appl. Phys. Lett. 85, 630 (2004).
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 630
-
-
Scarel, G.1
Bonera, E.2
Wiemer, C.3
Tallarida, G.4
Spiga, S.5
Fanciulli, M.6
Fedushkin, I.L.7
Schumann, H.8
Lebedinskii, Y.9
Zenkevich, A.10
-
65
-
-
85103545995
-
X-ray reflectivity characterization of thin-film and multilayer structures
-
E. Zschech, C.M. Whelan, and T. Mikolajick, Springer, Berlin Heidelberg New York
-
P. Zaumseil. X-ray reflectivity characterization of thin-film and multilayer structures, in Materials for Information Technology, Eds. E. Zschech, C.M. Whelan, and T. Mikolajick, Springer, Berlin Heidelberg New York (2005).
-
(2005)
Materials for Information Technology
-
-
Zaumseil, P.1
-
69
-
-
0011722745
-
Specular Reflectivity from smooth and rough surfaces
-
J. Daillant and A. Gibaud, Springer, Berlin Heidelberg New York
-
A. Gibaud. Specular Reflectivity from smooth and rough surfaces, in X-ray and Neutron Reflectivity: Principles and Applications, Eds. J. Daillant and A. Gibaud, Springer, Berlin Heidelberg New York (1999).
-
(1999)
X-Ray and Neutron Reflectivity: Principles and Applications
-
-
Gibaud, A.1
-
70
-
-
85103604427
-
-
http://www.ing.unitn.it/∼maud/
-
-
-
-
71
-
-
85103537822
-
-
M. Fanciulli and G. Scarel, Springer, Berlin Heidelberg New York
-
Yu. Lebedinskii, A. Zenkevich, G. Scarel, and M. Fanciulli. Film and interface layer composition of rare earth (Lu, Yb) oxides deposited by ALD, in Rare earth oxide thin films: growth, characterization, and applications, Eds. M. Fanciulli and G. Scarel, Springer, Berlin Heidelberg New York (2006).
-
(2006)
Film and Interface Layer Composition of Rare Earth (Lu, Yb) Oxides Deposited by ALD, in Rare Earth Oxide Thin Films: Growth, Characterization, and Applications
-
-
Lebedinskii, Y.1
Zenkevich, A.2
Scarel, G.3
Fanciulli, M.4
-
72
-
-
0000343237
-
V. Afanas’ev. Internal photoemission spectroscopy of semiconductor-insulator interfaces
-
V.K. Adamchuk and V.V. Afanas’ev. Internal photoemission spectroscopy of semiconductor-insulator interfaces. Prog. Surf. Sci. 41, 111 (1992).
-
(1992)
Prog. Surf. Sci
, vol.41
, pp. 111
-
-
Adamchuk, V.K.1
-
78
-
-
79956039125
-
2 films on Si (100) grown by atomic-layer deposition
-
2 films on Si (100) grown by atomic-layer deposition. Appl. Phys. Lett. 81, 472 (2002).
-
(2002)
Appl. Phys. Lett.
, vol.81
, pp. 472
-
-
Cho, M.-H.1
Roh, Y.S.2
Whang, C.N.3
Jeong, K.4
Nahm, S.W.5
Ko, D.-H.6
Lee, J.H.7
Lee, N.I.8
Fujihara, K.9
-
83
-
-
9744276741
-
2 on germanium and the impact of surface pretreatments
-
2 on germanium and the impact of surface pretreatments. Appl. Phys. Lett. 85, 3824 (2004).
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 3824
-
-
van Elshocht, S.1
Brijs, B.2
Caymax, M.3
Conard, T.4
Chiarella, T.5
de Gendt, S.6
de Jaeger, B.7
Kubicek, S.8
Meuris, M.9
Onsia, B.10
Richard, O.11
Teerlinck, I.12
van Steenbergen, J.13
Zhao, C.14
Heyns, M.15
-
84
-
-
0029273669
-
Oxidation of Ge(100) amd Ge(111) surfaces: And UPS and XPS sudy
-
and references therein
-
K. Prabhakaran and T. Ogino. Oxidation of Ge(100) amd Ge(111) surfaces: and UPS and XPS sudy. Surf. Sci. 325, 263 (1995) and references therein.
-
(1995)
Surf. Sci.
, vol.325
, pp. 263
-
-
Prabhakaran, K.1
Ogino, T.2
-
85
-
-
0000880086
-
Oxide thickness effect and surface roughening in the desorption of the oxide from GaAs
-
T. Van Buuren, M.K. Weilmeier, I. Athwal, K.M. Colbow, J.A. Mackenzie, T. Tiedje, P.C. Wong, and K.A.R. Mitchell. Oxide thickness effect and surface roughening in the desorption of the oxide from GaAs. Appl. Phys. Lett. 59, 464 (1991).
-
(1991)
Appl. Phys. Lett.
, vol.59
, pp. 464
-
-
van Buuren, T.1
Weilmeier, M.K.2
Athwal, I.3
Colbow, K.M.4
Mackenzie, J.A.5
Tiedje, T.6
Wong, P.C.7
Mitchell, K.A.R.8
-
86
-
-
0019056629
-
A single-frequency approximation for interface state density determination
-
W.A. Hill and C.C. Coleman. A single-frequency approximation for interface state density determination. Solid State Electron 23, 987 (1980).
-
(1980)
Solid State Electron
, vol.23
, pp. 987
-
-
Hill, W.A.1
Coleman, C.C.2
-
87
-
-
4444224905
-
Scalability and electrical properties of germanium oxynitride MOS dielectrics
-
Chi. O. Chui, F. Ito, and K.C. Saraswat. Scalability and electrical properties of germanium oxynitride MOS dielectrics. IEEE Electron Device Lett. 25, 613 (2004).
-
(2004)
IEEE Electron Device Lett
, vol.25
, pp. 613
-
-
Chui, C.O.1
Ito, F.2
Saraswat, K.C.3
-
88
-
-
0026222784
-
Preparation and C–V characteristic of the Ge-MOS structure using plasma-anodized film as gate insulator
-
S. Zhaoqi and L. Chunrong. Preparation and C–V characteristic of the Ge-MOS structure using plasma-anodized film as gate insulator. J. Phys. D 24, 1624 (1991).
-
(1991)
J. Phys. D
, vol.24
, pp. 1624
-
-
Zhaoqi, S.1
Chunrong, L.2
-
95
-
-
17744390392
-
Band alignment between (100)Si and complex rare earth/transition metal oxides
-
V.V. Afanas’ev, A. Stesmans, C. Zhao, M. Caymax, T. Heeg, J. Schubert, Y. Jia, D.G. Scholm, and G. Lucovsky. Band alignment between (100)Si and complex rare earth/transition metal oxides. Appl. Phys. Lett. 85, 5917 (2004).
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 5917
-
-
Afanas’Ev, V.V.1
Stesmans, A.2
Zhao, C.3
Caymax, M.4
Heeg, T.5
Schubert, J.6
Jia, Y.7
Scholm, D.G.8
Lucovsky, G.9
-
96
-
-
33646896809
-
7/(001)Si interface
-
7/(001)Si interface. Appl. Phys. Lett. 88, 202903 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.88
-
-
Seguini, G.1
Spiga, S.2
Bonera, E.3
Fanciulli, M.4
Reyes Huamantinco, A.5
Först, C.J.6
Ashman, C.R.7
Blöchl, P.E.8
Dimoulas, A.9
Mavrou, G.10
-
99
-
-
10844252200
-
2/Si, SiGe, and Ge interfaces
-
2/Si, SiGe, and Ge interfaces. Appl. Phys. Lett. 85, 4418 (2004).
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 4418
-
-
Wang, S.J.1
Huan, A.C.H.2
Foo, Y.L.3
Chai, J.W.4
Pan, J.S.5
Li, Q.6
Dong, Y.F.7
Feng, Y.P.8
Ong, C.K.9
|