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Volumn 76, Issue 3, 2000, Pages 312-314

Initial growth of Ga2O3(Gd2O3) on GaAs: Key to the attainment of a low interfacial density of states

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Indexed keywords


EID: 0000017076     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125730     Document Type: Article
Times cited : (84)

References (12)
  • 4
    • 0031268958 scopus 로고    scopus 로고
    • F. Ren, M. Hong, W. S. Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts, J. Kwo, Y. K. Chen, and A. Y. Cho, Tech. Dig. Int. Electron Devices Meet. 943 (1996): Solid-State Electron. 41, 1751 (1997).
    • (1997) Solid-state Electron. , vol.41 , pp. 1751
  • 6
    • 0032595856 scopus 로고    scopus 로고
    • Y. C. Wang, M. Hong, J. M. Kuo, J. P. Mannaerts, J. Kwo, H. S. Tsai, J. J. Krajewski, Y. K. Chen, and A. Y. Cho, Tech. Dig. Int. Electron Devices Meet. 67 (1998): Electron. Lett. 20, 457 (1999).
    • (1999) Electron. Lett. , vol.20 , pp. 457
  • 12
    • 85037502560 scopus 로고    scopus 로고
    • unpublished
    • 7. H. Lu and M. Hong (unpublished).
    • Lu, H.1    Hong, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.