Si interlayer passivation on germanium MOS capacitors with high-Κ dielectric and metal gate

IEEE Electron Device Letters

Volumn 26, Issue 6, 2005, Pages 378-380

  Bai, W P ^a   Lu, N ^a   Kwong, D L ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Ammonia treatment; Germanium; Hafnium oxide; High dielectric; MOS capacitors; Silicon interlayer

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; ELECTRIC PROPERTIES; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HYSTERESIS; PASSIVATION; PERMITTIVITY; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

AMMONIA TREATMENT; LEAKAGE CURRENT DENSITY; METAL GATE; SILICON INTERLAYER;

MOS CAPACITORS;

EID: 20544468992     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.848128     Document Type: Article

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