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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 5, 2001, Pages 2282-2286

Growth of NiO films on various GaAs faces via electron bombardment evaporation

(3) Nishita, K a Koma, A a Saiki, K a

a UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; FILM GROWTH; NICKEL COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; ULTRAVIOLET SPECTROSCOPY;

HETEROEPITAXIAL GROWTH; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY (UPS);

THIN FILMS;

EID: 0035440121 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1382878 Document Type: Article

Times cited : (12)

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