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Volumn 82, Issue 18, 2003, Pages 2978-2980

Growth and physical properties of Ga2O3 thin films on GaAs(001) substrate by molecular-beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; FILM GROWTH; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0038528479     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1572478     Document Type: Article
Times cited : (76)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.