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Volumn 82, Issue 18, 2003, Pages 2978-2980
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Growth and physical properties of Ga2O3 thin films on GaAs(001) substrate by molecular-beam epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CRYSTAL ORIENTATION;
FILM GROWTH;
GALLIUM COMPOUNDS;
MOLECULAR BEAM EPITAXY;
POLYCRYSTALLINE MATERIALS;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
STOICHIOMETRY;
TRANSMISSION ELECTRON MICROSCOPY;
EVAPORATION SOURCES;
THIN FILMS;
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EID: 0038528479
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1572478 Document Type: Article |
Times cited : (76)
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References (9)
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