Experiments in MIS structure based on germanium and improvements of the interfacial properties

Materials Chemistry and Physics

Volumn 62, Issue 3, 2000, Pages 273-276

  Benamara, Z ^a   Tizi, S ^a   Chellali, M ^a   Gruzza, B ^b  

^a UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^b UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ANNEALING; INTERFACES (MATERIALS); MIS DEVICES; SEMICONDUCTOR DEVICE STRUCTURES;

GERMANIUM DIOXIDE;

SEMICONDUCTING GERMANIUM;

EID: 0033874391     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(98)00260-0     Document Type: Article

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