Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 2297-2300

  Hong, M ^a   Passlack, M ^a,b   Mannaerts, J P ^a   Kwo, J ^a   Chu, S N G ^a   Moriya, N ^a   Hou, S Y ^a   Fratello, V J ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012426898     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588924     Document Type: Article

References (16)

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