Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy

Applied Physics Letters

Volumn 68, Issue 8, 1996, Pages 1099-1101

  Passlack, M ^a   Hong, M ^a   Mannaerts, J P ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000465918     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115725     Document Type: Article

References (21)

1. A review can be found in C. W. Wilmsen, Physics and Chemistry of III-V Compound Semiconductor Interfaces (Plenum, New York, 1985).
2. J. S. Herman and F. L. Terry, Appl. Phys. Lett. AIP 60, 716 (1992).
3. C. J. Sandroff, M. S. Hedge, L. A. Farrow, R. Bhat, J. P. Harbison, and C. C. Chang, J. Appl. Phys. AIP 67, 586 (1990).
4. A. Callegari, P. D. Hoh, D. A. Buchanan, and D. Lacey, Appl. Phys. Lett. AIP 54, 332 (1989).
5. See, for example, Z. Wang, M. E. Lin, D. Biswas, B. Mazhari, N. Teraguchi, Z. Fan, X. Gui, and H. Morkoç, Appl. Phys. Lett. 62, 2977 (1993).
6. See, for example, W. E. Spicer, I. Lindau, P. Skeath, C. Y. Su, and P. Chye, J. Vac. Sci. Technol. 17, 1019 (1980).
7. J. M. Woodall and J. L. Freeouf, J. Vac. Sci. Technol. AIP 19, 794 (1981).
8. G. P. Schwartz, Thin Solid Films INS 103, 3 (1983).
9. M. Passlack, M. Hong, J. P. Mannaerts, and J. R. Kwo, 53rd DRC Late News Technical Digest (IEEE, New York, 1995), p. 13.
10. M. Passlack, M. Hong, E. F. Schubert, J. R. Kwo, J. P. Mannaerts, S. N. G. Chu, N. Moriya, and F. A. Thiel, Appl. Phys. Lett. AIP 66, 625 (1995).
11. M. Passlack, M. Hong, J. P. Mannaerts, S. N. G. Chu, R. L. Opila, and N. Moriya, IEDM Tech. Dig. 1995, 383.
12. M. Passlack, M. Hong, T. D. Harris, and J. P. Mannaerts (unpublished).
13. M. Hong, J. Cryst. Growth INS 150, 277 (1995).
14. M. Passlack, E. F. Schubert, W. S. Hobson, M. Hong, N. Moriya, S. N. G. Chu, K. Konstadinidis, J. P. Mannaerts, M. L. Schnoes, and G. J. Zydzik, J. Appl. Phys. AIP 77, 686 (1995).
15. S. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), p. 386.
16. F. P. Heiman and G. Warfield, IEEE Trans. Electron Devices INS 12, 167 (1965).
17. M. Passlack, M. Hong, and J. P. Mannaerts, Solid State Electron. (in press).
18. A. R. von Hippell, Dielectrics and Waves (Wiley, New York, 1954), p. 412.
19. See, for example, M. S. Lundstrom and R. J. Schuelke, IEEE Trans. Electron Devices 30, 1151 (1983).
20. C. N. Berglund, IEEE Trans. Electron Devices INS 13, 701 (1966).
21. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982), p. 331.