Advances in high κ gate dielectrics for Si and III-V semiconductors

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 645-650

  Kwo, J ^a   Hong, M ^a   Busch, B ^b   Muller, D A ^c   Chabal, Y J ^a   Kortan, A R ^c   Mannaerts, J P ^a   Yang, B ^a   Ye, P ^a   Gossmann, H ^a   Sergent, A M ^c   Ng, K K ^a   Bude, J ^a   Schulte, W H ^d   Garfunkel, E ^d   Gustafsson, T ^d  

^a AGERE SYSTEMS   (United States)

^b MICRON TECHNOLOGY INC   (United States)

^c LUCENT TECHNOLOGIES   (United States)

^d RUTGERS UNIVERSITY   (United States)

Author keywords

A3. Molecular beam epitaxy; B1. Oxides; B2. Dielectric materials; B3. Field effect transistors

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC FILMS; GATES (TRANSISTOR); INTERFACES (MATERIALS); PERMITTIVITY; RARE EARTH COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; THERMODYNAMIC STABILITY; THIN FILMS; ULTRAHIGH VACUUM;

INTERFACIAL STRUCTURES;

MOLECULAR BEAM EPITAXY;

EID: 0037382841     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02192-9     Document Type: Conference Paper

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