Hetero-epitaxy of perovskite oxides on GaAs(001) by molecular beam epitaxy

Applied Physics Letters

Volumn 85, Issue 7, 2004, Pages 1217-1219

  Liang, Y ^a   Kulik, J ^a   Eschrich, T C ^a   Droopad, R ^a   Yu, Z ^a   Maniar, P ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL OXIDES; HETERO-EPITAXY; INTERFACE PROPERTIES; PEROVSKITE OXIDES;

CRYSTALLINE MATERIALS; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; OXIDES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; STRONTIUM COMPOUNDS; TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

PEROVSKITE;

EID: 4444233501     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1783016     Document Type: Article

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