Trends of structural and electrical properties in atomic layer deposited HfO2 films

Materials Science and Engineering: B

Volumn 109, Issue 1-3, 2004, Pages 11-16

  Scarel, G ^a   Spiga, S ^a   Wiemer, C ^a   Tallarida, G ^a   Ferrari, S ^a   Fanciulli, M ^a  

^a LABORATORIO MDM   (Italy)

Author keywords

Atomic layer deposition; Hafnium dioxide; High oxides

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; ELECTRIC PROPERTIES; HAFNIUM COMPOUNDS; HEAT TREATMENT; HIGH TEMPERATURE EFFECTS; LASER PULSES; LAYERED MANUFACTURING; OPTIMIZATION; SEMICONDUCTOR MATERIALS; SILICA; STRUCTURE (COMPOSITION);

ATOMIC LAYER DEPOSITION; HAFNIUM DIOXIDE; HIGH-K OXIDES; STRUCTURAL PROPERTIES;

THIN FILMS;

EID: 2342598390     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.10.021     Document Type: Conference Paper

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