Physical characterization of HfO2 deposited on Ge substrates by MOCVD

Materials Research Society Symposium Proceedings

Volumn 809, Issue , 2004, Pages 287-292

  Van Elshocht, S ^a   Brijs, B ^a   Caymax, M ^a   Conard, T ^a   De Gendt, S ^a   Kubicek, S ^a   Meuris, M ^a   Onsia, B ^a   Richard, O ^a   Teerlinck, I ^a   Van Steenbergen, J ^a   Zhao, C ^a   Heyns, M ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; DEGRADATION; DIELECTRIC MATERIALS; EPITAXIAL GROWTH; GERMANIUM; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE DIELECTRICS; INTERFACIAL LAYERS; SILICON SUBSTRATES; SURFACE PREPARATION;

HAFNIUM COMPOUNDS;

EID: 19944434145     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-811-d5.4/b5.4     Document Type: Conference Paper

References (4)

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3. H. Kim, C.O. Chui, K.C. Saraswat, and P.C. McIntyre, Appl. Phys. Lett., 83, 2647 (2003).
4. S. Van Elshocht, M. Caymax, S. De Gendt, T. Conard, J. Pétry, L. Daté, D. Pique, and M.M. Heyns, J. Electrochem. Soc., 151, F77-F80 (2004).