Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 307-310

  Whang, S J ^a   Lee, S J ^a   Gao, Fei ^a   Wu, Nan ^a   Zhu, C X ^a   Pan, Ji Sheng ^b   Tang, Lei Jun ^c   Kwong, D L ^d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE STACKS; HIGH-FREQUENCY C-V; SELF ALIGNED PROCESSES; SURFACE PASSIVATION; C-V CHARACTERISTIC; GE SUBSTRATES; GERMANIUMS (GE); LOW LEAKAGE; NOVEL SURFACES; OUT-DIFFUSION; P-TYPE; THERMAL STABILITY STUDIES;

ALUMINUM NITRIDE; CARRIER MOBILITY; DEGRADATION; DIFFUSION; GATES (TRANSISTOR); GERMANIUM; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; PASSIVATION; PLASMAS; RAPID THERMAL ANNEALING; SILICON; SURFACE TREATMENT; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY; VOLTAGE CONTROL; FABRICATION; HAFNIUM OXIDES; HOLE MOBILITY; LOGIC GATES; MOS DEVICES;

MOSFET DEVICES;

EID: 19944393665     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. H. Shang, et al., "High Mobility p-channel Germanium MOSFETs with a Thin Ge Oxynitride Gate Dielectric," IEEE IEDM 2002 Technical Digest, pp. 441-444, 2002.
2. C. O. Chui, et al., "A Sub-400°C Germanium MOSFET Technology with High-k Dielectric and Metal Gate," IEEE IEDM 2002 Technical Digest, pp. 437-440, 2002.
3. C. O. Chui, H. S. Kim, P. C. McIntyre, and K. C. Saraswat, "A Germanium NMOSFET Process Integrating Metal Gate and Improved Hi-k Dielectrics," IEEE IEDM 2003 Technical Digest, pp. 437-440, 2003.
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7. 2 films on Ge substrate," Applied Physics Letters, Vol. 84, pp. 3741-3743, 2004.