Al 2O 3-Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates

IEEE Electron Device Letters

Volumn 25, Issue 3, 2004, Pages 138-140

  Yu, D S ^a   Huang, C H ^a   Chin, Albert ^a   Zhu, Chunxiang ^b   Li, M F ^b   Cho, Byung Jin ^b   Kwong, Dim Lee ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c The University of Texas at Austin   (United States)

Author keywords

Ge; Ge on insulator (GOI); MOSFET; NiGe; NiSi

Indexed keywords

GE-ON-INSULATOR (GOI); NIGE; NISI;

ALUMINA; CRYSTALLIZATION; DIELECTRIC DEVICES; ELECTRIC INSULATORS; ELECTRON MOBILITY; GATES (TRANSISTOR); HOLE MOBILITY; INTERFACES (MATERIALS); LEAKAGE CURRENTS; NICKEL COMPOUNDS; RAPID THERMAL ANNEALING; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; THICKNESS CONTROL;

MOSFET DEVICES;

EID: 1642352532     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.824249     Document Type: Article

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