Metal oxides for optoelectronic applications

Nature Materials

Volumn 15, Issue 4, 2016, Pages 383-396

  Yu, Xinge ^a,b   Marks, Tobin J ^a   Facchetti, Antonio ^a,c  

^a NORTHWESTERN UNIVERSITY   (United States)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c POLYERA CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; ELECTRONIC STRUCTURE; FLAT PANEL DISPLAYS; III-V SEMICONDUCTORS; SEMICONDUCTOR JUNCTIONS; SILICON COMPOUNDS; STRUCTURAL GEOLOGY; THIN FILM SOLAR CELLS; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

AMORPHOUS OXIDE SEMICONDUCTOR (AOS); CHARGE TRANSPORT MECHANISMS; COMPLEMENTARY CIRCUITS; ELECTRONIC CHARACTERISTICS; INORGANIC SEMICONDUCTORS; OPTOELECTRONIC APPLICATIONS; OPTOELECTRONIC PROPERTIES; TRANSPARENT CONDUCTING OXIDE;

OXIDE SEMICONDUCTORS;

EID: 84961589927     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat4599     Document Type: Article

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