Thin film transistor of ZnO fabricated by chemical solution deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 1, 2001, Pages 297-298

  Ohya, Y ^a   Niwa, T ^a   Ban, T ^a   Takahashi, Y ^a  

^a GIFU UNIVERSITY   (Japan)

Author keywords

Bottom gate; Chemical solution deposition; Sol gel method; TFT; ZnO

Indexed keywords

ANNEALING; CHARGE CARRIERS; DEPOSITION; FILM PREPARATION; HIGH TEMPERATURE EFFECTS; LOW TEMPERATURE EFFECTS; SILICON WAFERS; SOL-GELS; ZINC OXIDE;

CHEMICAL SOLUTION DEPOSITION;

THIN FILM TRANSISTORS;

EID: 0035070848     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.40.297     Document Type: Article

References (7)