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Volumn 98, Issue 15, 2011, Pages

Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors

(3) Chowdhury, Md Delwar Hossain a Migliorato, Piero a,b Jang, Jin a

a Kyung Hee University (South Korea)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BACK CHANNELS; DEFECT FORMATION; EXPONENTIALS; FITTING PARAMETERS; IN-VACUUM; POSITIVE BIAS; POSITIVE GATE BIAS; ROOM TEMPERATURE; STRESS TEMPERATURE; TIME CONSTANTS; TIME-TEMPERATURE DEPENDENCE;

ACTIVATION ENERGY; AMORPHOUS FILMS; ARRHENIUS PLOTS; GALLIUM; PASSIVATION; RECOVERY; SILICON COMPOUNDS; TEMPERATURE DISTRIBUTION; THIN FILM TRANSISTORS; ZINC;

INDIUM;

EID: 79954618666 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3580611 Document Type: Article

Times cited : (129)

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