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Volumn 1, Issue 27, 2013, Pages 4236-4243

Metal salt-derived In-Ga-Zn-O semiconductors incorporating formamide as a novel co-solvent for producing solution-processed, electrohydrodynamic-jet printed, high performance oxide transistors

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PERFORMANCE; FIELD-EFFECT MOBILITIES; IN-GA-ZN-O (IGZO); OXIDE SEMICONDUCTOR; PRECURSOR SOLUTIONS; SOLUTION-PROCESSED; STRUCTURAL EVOLUTION; THRESHOLD VOLTAGE SHIFTS;

EID: 84879954623     PISSN: 20507534     EISSN: 20507526     Source Type: Journal    
DOI: 10.1039/c3tc30530a     Document Type: Article
Times cited : (76)

References (76)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.