Engineering of flexo- and gravure-printed indium-zinc-oxide semiconductor layers for high-performance thin-film transistors

IEEE Transactions on Electron Devices

Volumn 62, Issue 9, 2015, Pages 2871-2877

  Spiehl, Dieter ^a   Häming, Marc ^b   Sauer, Hans Martin ^a   Bonrad, Klaus ^b   Dörsam, Edgar ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b MERCK KGAA   (Germany)

Author keywords

Flexo printing; gravure printing; indium zinc oxide (IZO); thin film transistors (TFTs).

Indexed keywords

GRAPHIC METHODS; INDIUM; PRINTING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM; THIN FILMS; THRESHOLD VOLTAGE; TRANSISTORS; ZINC; ZINC OXIDE;

FLEXO PRINTING; GRAVURE PRINTING; INDIUM ZINC OXIDES; NANOMETER THIN FILMS; ON/OFF-CURRENT RATIOS; SEMICONDUCTOR THIN FILMS; THIN-FILM TRANSISTOR (TFTS); WHITE-LIGHT INTERFEROMETRY;

THIN FILM TRANSISTORS;

EID: 85027921352     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2015.2449665     Document Type: Article

References (42)

1. R. A. Street et al., Jet printing flexible displays, Mater. Today, vol. 9, no. 4, pp. 32-37, Apr. 2006
2. K. Kim et al., Patterning of flexible transparent thin-film transistors with solution-processed ZnO using the binary solvent mixture, Adv. Funct. Mater., vol. 21, no. 18, pp. 3546-3553, Sep. 2011
3. F. C. Krebs, N. Espinosa, M. Hösel, R. R. Sondergaard, and M. Jorgensen, 25th anniversary article: Rise to power-OPV-based solar parks, Adv. Mater., vol. 26, no. 1, pp. 29-39, Jan. 2014
4. E. Fortunato, P. Barquinha, and R. Martins, Oxide semiconductor thinfilm transistors: A review of recent advances, Adv. Mater., vol. 24, no. 22, pp. 2945-2986, Jun. 2012
5. M. Jung et al., All-printed and roll-to-roll-printable 13.56-MHzoperated 1-bit RF tag on plastic foils, IEEE Trans. Electron Devices, vol. 57, no. 3, pp. 571-580, Mar. 2010
6. P. S. Heljo, M. Li, K. E. Lilja, H. S. Majumdar, and D. Lupo, Printed half-wave and full-wave rectifier circuits based on organic diodes, IEEE Trans. Electron Devices, vol. 60, no. 2, pp. 870-874, Feb. 2013
7. D. Deganello, J. A. Cherry, D. T. Gethin, and T. C. Claypole, Patterning of micro-scale conductive networks using reel-to-reel flexographic printing, Thin Solid Films, vol. 518, no. 21, pp. 6113-6116, Aug. 2010
8. D.-H. Kim, R. Ghaffari, N. Lu, and J. A. Rogers, Flexible and stretchable electronics for biointegrated devices, Annu. Rev. Biomed. Eng., vol. 14, pp. 113-128, Apr. 2012
9. K. Park et al., Stretchable, transparent zinc oxide thin film transistors, Adv. Funct. Mater., vol. 20, no. 20, pp. 3577-3582, Oct. 2010
10. J.-S. Park et al., Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors, Appl. Phys. Lett., vol. 95, no. 1, p. 013503, Jul. 2009
11. H. Hosono, Transparent amorphous oxide semiconductors for flexible electronics, in Handbook of Transparent Conductors, D. S. Ginley, H. Hosono, and D. C. Paine, Eds. New York, NY, USA: Springer-Verlag, 2010, ch. 13, pp. 459-488
12. S. Dasgupta, R. Kruk, N. Mechau, and H. Hahn, Inkjet printed, high mobility inorganic-oxide field effect transistors processed at room temperature, ACS Nano, vol. 5, no. 12, pp. 9628-9638, Nov. 2011
13. Y.-H. Kim et al., Flexible metal-oxide devices made by roomtemperature photochemical activation of sol-gel films, Nature, vol. 489, no. 7414, pp. 128-132, Sep. 2012
14. K. K. Banger et al., Low-temperature, high-performance solutionprocessed metal oxide thin-film transistors formed by a sol-gel on chip process, Nature Mater., vol. 10, no. 1, pp. 45-50, Jan. 2011
15. M. G. Kim, M. G. Kanatzidis, A. Facchetti, and T. J. Marks, Lowtemperature fabrication of high-performance metal oxide thin-film electronics via combustion processing, Nature Mater., vol. 10, no. 5, pp. 382-388, May 2011
16. D. E. Walker et al., High mobility indium zinc oxide thin film fieldeffect transistors by semiconductor layer engineering, ACS Appl. Mater. Interf., vol. 4, no. 12, pp. 6835-6841, Dec. 2012
17. R. C. Hoffmann et al., Molecular precursor derived and solution processed indium-zinc oxide as a semiconductor in a field-effect transistor device. Towards an improved understanding of semiconductor film composition, J. Mater. Chem. C, vol. 1, no. 14, pp. 2577-2584, Feb. 2013
18. K.-B. Park et al., High electrical performance of wet-processed indium zinc oxide thin-film transistors, IEEE Electron Device Lett., vol. 31, no. 4, pp. 311-313, Apr. 2010
19. C. G. Choi, S.-J. Seo, and B.-S. Bae, Solution-processed indium-zinc oxide transparent thin-film transistors, Electrochem. Solid-State Lett., vol. 11, no. 1, pp. H7-H9, Nov. 2008
20. G. H. Kim, H. S. Kim, H. S. Shin, B. D. Ahn, K. H. Kim, and H. J. Kim, Inkjet-printed InGaZnO thin film transistor, Thin Solid Films, vol. 517, no. 14, pp. 4007-4010, May 2009
21. Y. Wang, X. W. Sun, G. K. L. Goh, H. V. Demir, and H. Y. Yu, Influence of channel layer thickness on the electrical performances of inkjet-printed In-Ga-Zn oxide thin-film transistors, IEEE Trans. Electron Devices, vol. 58, no. 2, pp. 480-485, Feb. 2011
22. D.-H. Lee, Y.-J. Chang, G. S. Herman, and C.-H. Chang, A general route to printable high-mobility transparent amorphous oxide semiconductors, Adv. Mater., vol. 19, no. 6, pp. 843-847, Mar. 2007
23. M. Häming, A. Issanin, D. Walker, H. von Seggern, W. Jägermann, and K. Bonrad, Interrelation between chemical, electronic, and charge transport properties of solution-processed indium-zinc oxide semiconductor thin films, J. Phys. Chem. C, vol. 118, no. 24, pp. 12826-12836, Jun. 2014
24. D. J. Kim et al., Improved electrical performance of an oxide thin-film transistor having multistacked active layers using a solution process, ACS Appl. Mater. Interf., vol. 4, no. 8, pp. 4001-4005, Aug. 2012
25. D. Spiehl, S. Pankalla, M. Glesner, and E. Dörsam, Analysis of the mobility of printed organic p-channel transistors depending on the transistor geometry and orientation, J. Phys., Conf. Ser., vol. 345, no. 1, p. 012013, Feb. 2012
26. A. de la Fuente Vornbrock, D. Sung, H. Kang, R. Kitsomboonloha, and V. Subramanian, Fully gravure and ink-jet printed high speed pBTTT organic thin film transistors, Organic Electron., vol. 11, no. 12, pp. 2037-2044, Dec. 2010
27. M. M. Voigt et al., Polymer field-effect transistors fabricated by the sequential gravure printing of polythiophene, two insulator layers, and a metal ink gate, Adv. Funct. Mater., vol. 20, no. 2, pp. 239-246, Jan. 2010
28. N. Bornemann, H. Sauer, and E. Dörsam, Gravure printed ultrathin layers of small-molecule semiconductors on glass, J. Imag. Sci. Technol., vol. 55, no. 4, pp. 40201-1-40201-8, Jul. 2011
29. Y. Choi, G. H. Kim, W. H. Jeong, H. J. Kim, B. D. Chin, and J.-W. Yu, Characteristics of gravure printed InGaZnO thin films as an active channel layer in thin film transistors, Thin Solid Films, vol. 518, no. 22, pp. 6249-6252, Sep. 2010
30. S. Dilfer, R. C. Hoffmann, and E. Dörsam, Characteristics of flexographic printed indium-zinc-oxide thin films as an active semiconductor layer in thin film field-effect transistors, Appl. Surf. Sci., vol. 320, pp. 634-642, Nov. 2014
31. W. Beier et al., Fundamentals, in Handbook of Print Media: Technologies and Production Methods, H. Kipphan, Ed. Berlin, Germany: Springer-Verlag, 2001, ch. 1, pp. 4-202
32. M. Pashchanka, R. C. Hoffmann, A. Gurlo, and J. J. Schneider, Molecular based, chimie douce approach to 0D and 1D indium oxide nanostructures. Evaluation of their sensing properties towards CO and H2, J. Mater. Chem., vol. 20, no. 38, pp. 8311-8319, Jan. 2010
33. J. J. Schneider, R. C. Hoffmann, A. Issanin, and S. Dilfer, Zirconia and hafnia films from single source molecular precursor compounds: Synthesis, characterization and insulating properties of potential high k-dielectrics, Mater. Sci. Eng. B, vol. 176, no. 13, pp. 965-971, Aug. 2011
34. J. J. Schneider et al., A printed and flexible field-effect transistor device with nanoscale zinc oxide as active semiconductor material, Adv. Mater., vol. 20, no. 18, pp. 3383-3387, Sep. 2008
35. M. Pashchanka, R. C. Hoffmann, and J. J. Schneider, Controlled synthesis and characterisation of MgO nanoparticles, thin films and polycrystalline nanorods derived from a Mg(II) single source precursor, J. Mater. Chem., vol. 20, no. 5, pp. 957-963, Dec. 2009
36. Y. Zhou and P. J. Kelly, The properties of tin-doped indium oxide films prepared by pulsed magnetron sputtering from powder targets, Thin Solid Films, vols. 469-470, pp. 18-23, Dec. 2004
37. W. Wakeham et al., Material properties: Measurement and data, in Springer Handbook of Experimental Fluid Mechanics, C. Tropea, A. L. Yarin, and J. F. Foss, Eds. Berlin, Germany: Springer-Verlag, 2007, ch. 3, pp. 85-177
38. D. K. Owens and R. C. Wendt, Estimation of the surface free energy of polymers, J. Appl. Polymer Sci., vol. 13, no. 8, pp. 1741-1747, May 1969
39. W. Rabel, Einige Aspekte der Benetzungstheorie und ihre Anwendung auf die Untersuchung und Veränderung der Oberflächeneigenschaften von Polymeren, Farbe Lack, vol. 77, no. 10, pp. 997-1006, Oct. 1971
40. D. H. Kaelble, Dispersion-polar surface tension properties of organic solids, J. Adhes., vol. 2, no. 2, pp. 66-81, Apr. 1970
41. S. M. Sze and K. K. Ng, MOSFETs, in Physics of Semiconductor Devices. Hoboken, NJ, USA: Wiley, 2007, ch. 6, pp. 293-373
42. H. Hosono, Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application, J. Non-Cryst. Solids, vol. 352, nos. 9-20, pp. 851-858, Jun. 2006.