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Volumn 22, Issue 25, 2012, Pages 12491-12497

Erratum: Simultaneous modification of pyrolysis and densification for low-temperature solution-processed flexible oxide thin-film transistors (Journal of Materials Chemistry (2012) 22 (12491-12497) DOI: 10.1039/c2jm16846d);Simultaneous modification of pyrolysis and densification for low-temperature solution-processed flexible oxide thin-film transistors

(6) Rim, You Seung a Jeong, Woong Hee a Kim, Dong Lim a Lim, Hyun Soo a Kim, Kyung Min b Kim, Hyun Jae a

a Yonsei University (South Korea)

b LG Display Co Ltd (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM COMPOUNDS; METAL IONS; METALS; ORGANIC POLYMERS; OXIDE FILMS; PYROLYSIS; SECONDARY ION MASS SPECTROMETRY; TEMPERATURE; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; ZINC COMPOUNDS;

ANNEALING TEMPERATURES; DEVICE CHARACTERISTICS; FIELD-EFFECT MOBILITIES; HIGH-PRESSURE ANNEALING; LOW TEMPERATURE SOLUTIONS; OXIDE THIN-FILM TRANSISTORS; POLYMERIC SUBSTRATE; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84862216798 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c2jm90181a Document Type: Erratum

Times cited : (169)

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