Write-erase and read paper memory transistor

Applied Physics Letters

Volumn 93, Issue 20, 2008, Pages

  Martins, Rodrigo ^a   Barquinha, Pedro ^a   Pereira, Luís ^a   Correia, Nuno ^a   Goņalves, Goņalo ^a   Ferreira, Isabel ^a   Fortunato, Elvira ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULOSE DERIVATIVES; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR);

AMORPHOUS OXIDES; AND GATES; CELLULOSE FIBERS; CHARGE RETENTION TIMES; COUNTERCLOCKWISE HYSTERESISES; MEMORY EFFECTS; MEMORY TRANSISTORS; METAL LAYERS; NATURAL MULTILAYERS; ON/OFF RATIOS; SATURATION MOBILITIES; SOURCE/DRAIN ELECTRODES; STRUCTURAL SUPPORTS; VOLTAGE SHIFTS;

NATURAL FIBERS;

EID: 56849108223     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3030873     Document Type: Article

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