Field-effect transistors based on single semiconducting oxide nanobelts

Journal of Physical Chemistry B

Volumn 107, Issue 3, 2003, Pages 659-663

  Arnold, Michael S ^a   Avouris, Phaedon ^a   Pan, Zheng Wei ^b   Wang, Zhong L ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; EVAPORATION; NANOSTRUCTURED MATERIALS; PHOTOCONDUCTIVITY; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; THRESHOLD VOLTAGE; ULTRAVIOLET RADIATION;

ELECTRON BEAM EVAPORATION; GATE THRESHOLD VOLTAGE; NANOBELT DEVICES; SURFACE OXYGEN VACANCIES; THERMAL EVAPORATION;

FIELD EFFECT TRANSISTORS;

EID: 0037461671     PISSN: 10895647     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp0271054     Document Type: Article

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