Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

Proceedings of the National Academy of Sciences of the United States of America

Volumn 112, Issue 11, 2015, Pages 3217-3222

  Yu, Xinge ^a,b   Smith, Jeremy ^a   Zhou, Nanjia ^c   Zeng, Li ^a   Guo, Peijun ^c   Xia, Yu ^d   Alvarez, Ana ^d   Aghion, Stefano ^e,f   Lin, Hui ^a,b   Yu, Junsheng ^b   Chang, Robert P H ^c   Bedzyk, Michael J ^c   Ferragut, Rafael ^e,f   Marks, Tobin J ^a,c   Facchetti, Antonio ^a,d  

^a NORTHWESTERN UNIVERSITY   (United States)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c Northwestern University   (United States)

^d POLYERA CORPORATION   (United States)

^e Laboratory for Nanostructure Epitaxy and Spintronics on Silicon National Interuniversity Consortium for the Physical Sciences of Matter Dipartimento di Fisica   (Italy)

^f INFN SEZIONE DI MILANO   (Italy)

Author keywords

Combustion synthesis; Low temperature growth; Oxide film; Oxide transistor; Transistor

Indexed keywords

GALLIUM; INDIUM; METAL OXIDE; ZINC OXIDE;

ARTICLE; COMBUSTION; COMBUSTION SYNTHESIS; CONTROLLED STUDY; DENSITY; ELECTRIC POTENTIAL; ELECTRON; ELECTRONICS; LOW TEMPERATURE; POSITRON ANNIHILATION LIFETIME SPECTROSCOPY; PRIORITY JOURNAL; SEMICONDUCTOR; SYNTHESIS; THICKNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84925307911     PISSN: 00278424     EISSN: 10916490     Source Type: Journal    
DOI: 10.1073/pnas.1501548112     Document Type: Article

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