Flexography-Printed In2O3 Semiconductor Layers for High-Mobility Thin-Film Transistors on Flexible Plastic Substrate

Advanced Materials

Volumn 27, Issue 44, 2015, Pages 7168-7175

  Leppäniemi, Jaakko ^a   Huttunen, Olli Heikki ^a   Majumdar, Himadri ^a   Alastalo, Ari ^a  

^a VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

flexographic printing; metal oxides; post contact annealing; printed electronics; thin film transistors

Indexed keywords

ATOMIC LAYER DEPOSITION; GATE DIELECTRICS; NANOCRYSTALS; OFFSET PRINTING; PRINTING; PRINTING PRESSES; TEMPERATURE; THIN FILMS; TRANSISTORS;

FABRICATION METHOD; FLEXIBLE PLASTIC SUBSTRATES; FLEXOGRAPHIC PRINTING; METAL OXIDES; PRECURSOR SOLUTIONS; PRINTED ELECTRONICS; SEMICONDUCTOR LAYERS; THIN-FILM TRANSISTOR (TFTS);

THIN FILM TRANSISTORS;

INDIUM; INDIUM OXIDE; INK; PLASTIC;

CHEMISTRY; DEVICES; MECHANICS; PRINTING; TEMPERATURE; TRANSISTOR;

INDIUM; INK; MECHANICAL PROCESSES; PLASTICS; PRINTING; TEMPERATURE; TRANSISTORS, ELECTRONIC;

EID: 84949647401     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201502569     Document Type: Article

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