Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory

Nano Letters

Volumn 9, Issue 4, 2009, Pages 1476-1481

  Lee, Myoung Jae ^a   Han, Seungwu ^b   Jeon, Sang Ho ^c   Park, Bae Ho ^c   Kang, Bo Soo ^a   Ahn, Seung Eon ^a   Kim, Ki Hwan ^a   Lee, Chang Bum ^a   Kim, Chang Jung ^a   Yoo, In Kyeong ^a   Seo, David H ^d   Li, Xiang Shu ^a   Park, Jong Bong ^a   Lee, Jung Hyun ^a   Park, Youngsoo ^a  

^a SAMSUNG Electronics   (South Korea)

^b Ewha Womans University   (South Korea)

^c Konkuk University   (South Korea)

^d Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM UP AND TOP DOWNS; ELECTRICAL MANIPULATIONS; ELECTRICAL SIGNALS; HIGH DENSITIES; HIGH-SPEED; NANOFILAMENTS; NANOPILLARS; NON-VOLATILE MEMORY APPLICATIONS; QUANTUM DOTS; RESISTANCE SWITCHING; SCALING BEHAVIORS; SWITCHABLE; SWITCHING TIME; TRANSITION METAL-OXIDES;

ELECTRIC WIRE; GRAIN BOUNDARIES; NICKEL ALLOYS; PLATINUM; SEMICONDUCTOR QUANTUM DOTS; TRANSITION METALS;

NANOSTRUCTURES;

EID: 65249161894     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl803387q     Document Type: Article

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