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Volumn 95, Issue 13, 2009, Pages

Transparent flexible resistive random access memory fabricated at room temperature

(9) Won Seo, Jung a Park, Jae Woo a Lim, Keong Su a Kang, Sang Jung a Hong, Yun Ho a Yang, Ji Hwan a Fang, Liang a Sung, Gun Yong b Kim, Han Ki c

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Electronics and Telecommunications Research Institute (ETRI) (South Korea)

c Kyung Hee University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; CAPACITOR STRUCTURES; DATA RETENTION; FLEXIBLE ELECTRONIC SYSTEMS; FLEXIBLE SUBSTRATE; HIGH TRANSMITTANCE; HIGH TRANSPARENCY; ITO (INDIUM-TIN OXIDE); MEMORY PERFORMANCE; MULTI-LAYERED; POLYETHERSULFONES; RESISTIVE RANDOM ACCESS MEMORY; ROOM TEMPERATURE; ZNO;

BENDING TESTS; CONDUCTIVE FILMS; TIN; ZINC; ZINC OXIDE;

RANDOM ACCESS STORAGE;

EID: 70349682885 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3242381 Document Type: Article

Times cited : (124)

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