-
1
-
-
78651235595
-
-
Springer, New York
-
Ginley, D. S., Hosono, H. & Paine, D. C. Handbook of Transparent Conductors 459-487 (Springer, New York, 2011).
-
(2011)
Handbook of Transparent Conductors
, pp. 459-487
-
-
Ginley, D.S.1
Hosono, H.2
Paine, D.C.3
-
2
-
-
9744248669
-
Roomtemperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
-
Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M. & Hosono, H. Roomtemperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432, 488-492 (2004).
-
(2004)
Nature
, vol.432
, pp. 488-492
-
-
Nomura, K.1
Ohta, H.2
Takagi, A.3
Kamiya, T.4
Hirano, M.5
Hosono, H.6
-
3
-
-
78149439156
-
Material characteristics and applications of transparent amorphous oxide semiconductors
-
Kamiya, T. & Hosono, H. Material characteristics and applications of transparent amorphous oxide semiconductors. NPG Asia Mater 2, 15-22 (2010).
-
(2010)
NPG Asia Mater
, vol.2
, pp. 15-22
-
-
Kamiya, T.1
Hosono, H.2
-
4
-
-
66249097422
-
Thin-film transistors
-
Street, R. A. Thin-film transistors. Adv. Mater. 21, 2007-2022 (2009).
-
(2009)
Adv. Mater.
, vol.21
, pp. 2007-2022
-
-
Street, R.A.1
-
5
-
-
34547816749
-
Inorganic semiconductors for flexible electronics
-
Sun, Y. G. & Rogers, J. A. Inorganic semiconductors for flexible electronics. Adv. Mater. 19, 1897-1916 (2007).
-
(2007)
Adv. Mater.
, vol.19
, pp. 1897-1916
-
-
Sun, Y.G.1
Rogers, J.A.2
-
6
-
-
60349091512
-
Transparent and photo-stable ZnO thin-film transistors to drive an active matrix organic-light-emitting-diode display panel
-
Park, S. -H. K., Hwang, C. -S., Ryu, M., Yang, S., Byun, C., Shin, J., Lee, J. -I., Lee, K., Oh, M. S. & Im, S. Transparent and photo-stable ZnO thin-film transistors to drive an active matrix organic-light-emitting-diode display panel. Adv. Mater 21, 678-682 (2009).
-
(2009)
Adv. Mater
, vol.21
, pp. 678-682
-
-
Park, S.-H.K.1
Hwang, C.-S.2
Ryu, M.3
Yang, S.4
Byun, C.5
Shin, J.6
Lee, J.-I.7
Lee, K.8
Oh, M.S.9
Im, S.10
-
7
-
-
13544269370
-
High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
-
Chiang, H. Q., Wager, J. F., Hoffman, R. L., Jeong, J. & Keszler, D. A. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. Appl. Phys. Lett. 86, 013503 (2005).
-
(2005)
Appl. Phys. Lett.
, vol.86
, pp. 013503
-
-
Chiang, H.Q.1
Wager, J.F.2
Hoffman, R.L.3
Jeong, J.4
Keszler, D.A.5
-
9
-
-
75749132800
-
Materials and applications for large area electronics: Solution-based approaches
-
Arias, A. C., MacKenzie, J. D., McCulloch, I., Rivnay, J. & Salleo, A. Materials and applications for large area electronics: solution-based approaches. Chem. Rev. 110, 3-24 (2010).
-
(2010)
Chem. Rev.
, vol.110
, pp. 3-24
-
-
Arias, A.C.1
MacKenzie, J.D.2
McCulloch, I.3
Rivnay, J.4
Salleo, A.5
-
10
-
-
34250621864
-
A general route to printable high-mobility transparent amorphous oxide semiconductors
-
Lee, D. H., Chang, Y. J., Herman, G. S. & Chang, C. H. A general route to printable high-mobility transparent amorphous oxide semiconductors. Adv. Mater. 19, 843-847 (2007).
-
(2007)
Adv. Mater.
, vol.19
, pp. 843-847
-
-
Lee, D.H.1
Chang, Y.J.2
Herman, G.S.3
Chang, C.H.4
-
11
-
-
78149444851
-
2/Vs
-
2/Vs. Adv. Mater. 22, 4764-4769 (2010).
-
(2010)
Adv. Mater.
, vol.22
, pp. 4764-4769
-
-
Adamopoulos, G.1
Bashir, A.2
Thomas, S.3
Gillin, W.P.4
Georgakopoulos, S.5
Shkunov, M.6
Baklar, M.A.7
Stingelin, N.8
Maher, R.C.9
Cohen, L.F.10
Bradley, D.D.C.11
Anthopoulos, T.D.12
-
12
-
-
36148976499
-
Solution-processed indium-zinc oxide transparent thin-film transistors
-
Choi, C. G., Seo, S. -J. & Bae, B. -S. Solution-processed indium-zinc oxide transparent thin-film transistors. Electrochem. Solid-State Lett. 11, H7-H9 (2008).
-
(2008)
Electrochem. Solid-State Lett.
, vol.11
-
-
Choi, C.G.1
Seo, S.-J.2
Bae, B.-S.3
-
13
-
-
67849106925
-
Aqueous inorganic inks for low-temperature fabrication of ZnO TFTs
-
Meyers, S. T., Anderson, J. T., Hung, C. M., Thompson, J., Wager, J. F. & Keszler, D. A. Aqueous inorganic inks for low-temperature fabrication of ZnO TFTs. J. Am. Chem. Soc. 130, 17603-17609 (2008).
-
(2008)
J. Am. Chem. Soc.
, vol.130
, pp. 17603-17609
-
-
Meyers, S.T.1
Anderson, J.T.2
Hung, C.M.3
Thompson, J.4
Wager, J.F.5
Keszler, D.A.6
-
14
-
-
78650292470
-
Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a 'sol-gel on chip' process
-
Banger, K. K., Yamashita, Y., Mori, K., Peterson, R. L., Leedham, T., Rickard, J. & Sirringhaus, H. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a 'sol-gel on chip' process. Nat. Mater 10, 45-50 (2011).
-
(2011)
Nat. Mater
, vol.10
, pp. 45-50
-
-
Banger, K.K.1
Yamashita, Y.2
Mori, K.3
Peterson, R.L.4
Leedham, T.5
Rickard, J.6
Sirringhaus, H.7
-
15
-
-
79955037663
-
Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing
-
Kim, M. G., Kanatzidis, M. G., Facchetti, A. & Marks, T. J. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing. Nat. Mater. 10, 382-388 (2011).
-
(2011)
Nat. Mater.
, vol.10
, pp. 382-388
-
-
Kim, M.G.1
Kanatzidis, M.G.2
Facchetti, A.3
Marks, T.J.4
-
16
-
-
79959570999
-
Post-humid annealing of low-temperature solution-processed indium based metal oxide thin-film transistors
-
Hwang, Y. H., Jeon, J. H. & Bae, B. -S. Post-humid annealing of low-temperature solution-processed indium based metal oxide thin-film transistors. Electrochem. Solid-State Lett. 14, H303-H305 (2011).
-
(2011)
Electrochem. Solid-State Lett.
, vol.14
-
-
Hwang, Y.H.1
Jeon, J.H.2
Bae, B.-S.3
-
17
-
-
30644463099
-
Solution-processed zinc oxide field-effect transistors based on self-assembly of colloidal nanorods
-
Sun, B. & Sirringhaus, H. Solution-processed zinc oxide field-effect transistors based on self-assembly of colloidal nanorods. Nano Lett 5, 2408-2413 (2005).
-
(2005)
Nano Lett
, vol.5
, pp. 2408-2413
-
-
Sun, B.1
Sirringhaus, H.2
-
18
-
-
43449107662
-
Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material
-
Eda, G., Fanchini, G. & Chhowalla, M. Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material. Nat. Nanotech 3, 270-274 (2008).
-
(2008)
Nat. Nanotech
, vol.3
, pp. 270-274
-
-
Eda, G.1
Fanchini, G.2
Chhowalla, M.3
-
19
-
-
0542436060
-
Sol-gel chemistry of transition metal oxide
-
Livage, J., Henry, M. & Sanchez, C. Sol-gel chemistry of transition metal oxide. Prog. Solid St. Chem. 18, 259-341 (1988).
-
(1988)
Prog. Solid St. Chem.
, vol.18
, pp. 259-341
-
-
Livage, J.1
Henry, M.2
Sanchez, C.3
-
21
-
-
4243586447
-
The state of indium ions in nitrate solutions: A Raman spectroscopic study
-
Kozhevnikova, G. V. & Keresztury, G. The state of indium ions in nitrate solutions: a Raman spectroscopic study. Inorganica Chim. Acta. 98, 59-65 (1985).
-
(1985)
Inorganica Chim. Acta.
, vol.98
, pp. 59-65
-
-
Kozhevnikova, G.V.1
Keresztury, G.2
-
23
-
-
0030654695
-
Sintering of sol-gel films
-
Scherer, G. W. Sintering of sol-gel films. J. Sol-Gel Sci. Tech 8, 353-363 (1997).
-
(1997)
J. Sol-Gel Sci. Tech
, vol.8
, pp. 353-363
-
-
Scherer, G.W.1
-
24
-
-
77950192258
-
Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors
-
Jeong, S., Ha, Y. G., Moon, J., Facchetti, A. & Marks, T. J. Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors. Adv. Mater. 22, 1346-1350 (2010).
-
(2010)
Adv. Mater.
, vol.22
, pp. 1346-1350
-
-
Jeong, S.1
Ha, Y.G.2
Moon, J.3
Facchetti, A.4
Marks, T.J.5
-
25
-
-
0017525931
-
X-ray photoemission spectroscopy studies of Sn-doped indium-oxide films
-
Fan, J. C. C. & Goodenough, J. B. X-ray photoemission spectroscopy studies of Sn-doped indium-oxide films. J. Appl. Phys. 48, 3524-3531 (1977).
-
(1977)
J. Appl. Phys.
, vol.48
, pp. 3524-3531
-
-
Fan, J.C.C.1
Goodenough, J.B.2
-
26
-
-
0003459529
-
-
Physical Electronics, Minnesota
-
Moulder, J. F., Stickle, W. F., Sobol, P. E. & Bomben, K. D. Handbook of X-ray Photoelectron Spectroscopy 1-261 (Physical Electronics, Minnesota, 1992).
-
(1992)
Handbook of X-ray Photoelectron Spectroscopy
, pp. 1-261
-
-
Moulder, J.F.1
Stickle, W.F.2
Sobol, P.E.3
Bomben, K.D.4
-
27
-
-
68249152001
-
Low-temperature solution-processed amorphous indium tin oxide field-effect transistors
-
Kim, H. S., Kim, M. -G., Ha, Y. -G., Kanatzidis, M. G., Marks, T. J. & Facchetti, A. Low-temperature solution-processed amorphous indium tin oxide field-effect transistors. J. Am. Chem. Soc. 131, 10826-10827 (2009).
-
(2009)
J. Am. Chem. Soc.
, vol.131
, pp. 10826-10827
-
-
Kim, H.S.1
Kim, M.-G.2
Ha, Y.-G.3
Kanatzidis, M.G.4
Marks, T.J.5
Facchetti, A.6
-
28
-
-
67651227428
-
Solution-processed, highperformance aluminum indium oxide thin-film transistors fabricated at low temperature
-
Hwang, Y. H., Jeon, J. H., Seo, S. -J. & Bae, B. -S. Solution-processed, highperformance aluminum indium oxide thin-film transistors fabricated at low temperature. Electrochem. Solid-State Lett. 12, H336-H339 (2009).
-
(2009)
Electrochem. Solid-State Lett.
, vol.12
-
-
Hwang, Y.H.1
Jeon, J.H.2
Seo, S.-J.3
Bae, B.-S.4
-
29
-
-
77955734598
-
Post-annealing process for low temperature processed sol-gel zinc tin oxide thin film transistors
-
Seo, S. -J., Hwang, Y. H. & Bae, B. -S. Post-annealing process for low temperature processed sol-gel zinc tin oxide thin film transistors. Electrochem. Solid-State Lett 13, H357-H359 (2010).
-
(2010)
Electrochem. Solid-State Lett
, vol.13
-
-
Seo, S.-J.1
Hwang, Y.H.2
Bae, B.-S.3
-
30
-
-
34548460741
-
Role of oxygen desorption during vacuum annealing in the improvement of electrical properties of aluminum doped zinc oxide films synthesized by sol gel method
-
Zhu, M., Huang, H., Gong, J., Sun, C. & Jiang, X. Role of oxygen desorption during vacuum annealing in the improvement of electrical properties of aluminum doped zinc oxide films synthesized by sol gel method. J. Appl. Phys. 102, 043106 (2007).
-
(2007)
J. Appl. Phys.
, vol.102
, pp. 043106
-
-
Zhu, M.1
Huang, H.2
Gong, J.3
Sun, C.4
Jiang, X.5
-
31
-
-
34548684568
-
High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
-
Jeong, J. K., Jeong, J. H., Yang, H. W., Park, J. -S., Mo, Y. -G. & Kim, H. D. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel. Appl. Phys. Lett. 91, 113505 (2007).
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 113505
-
-
Jeong, J.K.1
Jeong, J.H.2
Yang, H.W.3
Park, J.-S.4
Mo, Y.-G.5
Kim, H.D.6
|