Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator

Applied Physics Letters

Volumn 95, Issue 1, 2009, Pages

  Moon, Yeon Keon ^a   Lee, Sih ^a   Kim, Woong Sun ^a   Kang, Byung Woo ^a   Jeong, Chang Oh ^b   Lee, Dong Hoon ^b   Park, Jong Wan ^a  

^a Hanyang University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS STABILITY; DEVICE PERFORMANCE; GATE INSULATOR; HIGH FIELD EFFECT MOBILITY; INDIUM GALLIUM ZINC OXIDES; INTERFACIAL CHARACTERISTICS; INTERFACIAL PROPERTY; PLASMA TREATMENT; SUBTHRESHOLD; TRAP DENSITY;

INDIUM; PLASMA APPLICATIONS; PLASMA DIAGNOSTICS; PLASMAS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON NITRIDE; THIN FILM DEVICES; THIN FILM TRANSISTORS; ZINC; ZINC OXIDE;

PLASMA STABILITY;

EID: 67650492747     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3167816     Document Type: Article

References (6)

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