Stable and High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition

ACS Applied Materials and Interfaces

Volumn 7, Issue 40, 2015, Pages 22610-22617

  Lin, Yuan Yu ^a   Hsu, Che Chen ^a   Tseng, Ming Hung ^a   Shyue, Jing Jong ^a,b   Tsai, Feng Yu ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

Author keywords

atomic layer deposition; flexible electronics; gas barrier; passivation; thin film transistors

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMS; DEFECTS; DEPOSITION; FLEXIBLE ELECTRONICS; PASSIVATION; SEMICONDUCTING ORGANIC COMPOUNDS; TEMPERATURE; THIN FILM TRANSISTORS; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

FIELD-EFFECT MOBILITIES; FLEXIBLE PLASTIC SUBSTRATES; GAS BARRIER; GAS BARRIER PROPERTIES; HIGH TEMPERATURE ANNEALING TREATMENTS; OXIDE THIN-FILM TRANSISTORS; TEMPERATURE-SENSITIVE MATERIALS; WATER VAPOR TRANSMISSION RATE;

GAS PERMEABLE MEMBRANES;

EID: 84944313357     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b07278     Document Type: Article

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