Extraction of trap densities in ZnO thin-film transistors and dependence on oxygen partial pressure during sputtering of ZnO films

IEEE Transactions on Electron Devices

Volumn 58, Issue 9, 2011, Pages 3018-3024

  Kimura, Mutsumi ^a   Furuta, Mamoru ^b   Kamada, Yudai ^c   Hiramatsu, Takahiro ^b   Matsuda, Tokiyoshi ^a   Furuta, Hiroshi ^b   Li, Chaoyang ^b   Fujita, Shizuo ^c   Hirao, Takashi ^b  

^a RYUKOKU UNIVERSITY   (Japan)

^b KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

^c KYOTO UNIVERSITY   (Japan)

Author keywords

Oxygen partial pressure; sputtering; thin film transistor (TFT); trap density; ZnO

Indexed keywords

C-V CHARACTERISTIC; CAPACITANCE VOLTAGE; CHANNEL LAYERS; CURRENT VOLTAGE; GAUSS'S LAW; LOW FREQUENCY; MEASUREMENT SYSTEM; OXYGEN PARTIAL PRESSURE; POTENTIAL GRADIENTS; SHALLOW STATE; SPATIAL PROFILES; TRAP DENSITY; ZNO; ZNO FILMS;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON MOBILITY; METALLIC FILMS; OXYGEN; POISSON EQUATION; POSITIVE IONS; SEMICONDUCTING ORGANIC COMPOUNDS; SURFACE POTENTIAL; SURFACE PROPERTIES; THIN FILM TRANSISTORS; ZINC OXIDE;

PARTIAL PRESSURE;

EID: 80052099173     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2158546     Document Type: Article

References (29)

1. T. Hirao, M. Furuta, T. Hiramatsu, T. Matsuda, C. Li, H. Furuta, H. Hokari, M. Yoshida, H. Ishii, and M. Kakegawa, "Bottom-gate zinc oxide thin-film transistors (ZnO TFTs) for AM-LCDs," IEEE Trans. Electron Devices, vol. 55, no. 11, pp. 3136-3142, Nov. 2008
2. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature, vol. 432, no. 7016, pp. 488-492, Nov. 2004 (Pubitemid 39585210)
3. T. Hirao, M. Furuta, H. Furuta, T. Matsuda, T. Hiramatsu, H. Hokari, M. Yoshida, H. Ishii, and M. Kakegawa, "Novel top-gate zinc oxide thinfilm transistors (ZnO TFTs) for AMLCDs," J. Soc. Inf. Display (SID), vol. 15, no. 1, pp. 17-22, Jan. 2007
4. S. H. K. Park, C. S. Hwang, M. Ryu, S. Yang, C. Byun, J. Shin, J. I. Lee, K. Lee, M. S. Oh, and S. Im, "Transparent and photo-stable ZnO thin-film transistors to drive an active matrix organic-light-emitting-diode display panel," Adv. Mater., vol. 21, no. 6, pp. 678-682, Feb. 2009
5. S. Aihara, H. Seo, M. Namba, T. Watabe, H. Ohtake, M. Kubota, N. Egami, T. Hiramatsu, T. Matsuda, M. Furuta, H. Nitta, and T. Hirao, "Stacked image sensor with green-and red-sensitive organic photoconductive films applying zinc oxide thin-film transistors to a signal readout circuit," IEEE Trans. Electron Devices, vol. 56, no. 11, pp. 2570-2576, Nov. 2009
6. R. L. Hoffman, B. J. Norris, and J. F.Wager, "ZnO-based transparent thinfilm transistors," Appl. Phys. Lett., vol. 82, no. 5, pp. 733-735, Feb. 2003
7. E. Fortunato, P. Barquinha, A. Pimentel, A. Gonçalves, A. Marques, L. Pereira, and R. Martins, "Recent advances in ZnO transparent thin film transistors," Thin Solid Films, vol. 487, no. 1/2, pp. 205-211, Sep. 2005 (Pubitemid 41046321)
8. G. D. Watkins, Point Defects in Solid, Vol. 2: Semiconductors and Molecular Crystals, J. H. Crawford, Jr. and L. M. Slifkin, Eds. New York: Plenum, 1975, ch. 4
9. D. V. Lang, "Deep-level transient spectroscopy: A new method to characterize traps in semiconductors," J. Appl. Phys., vol. 45, no. 7, pp. 3023-3032, Jul. 1974
10. D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. Hoboken, NJ: Wiley, 2006
11. J. Kocka, M. Vanecek, and A. Triska, Amorphous Silicon and Related Materials, H. Fritzshe, Ed. Singapore: World Scientific, 1988, p. 297
12. T.-K. A. Chou and J. Kanicki, "Two-dimensional numerical simulation of solid-phase-crystallized polysilicon thin-film transistor characteristics," Jpn. J. Appl. Phys., vol. 38, pt. 1, no. 4B, pp. 2251-2255, Apr. 1999 (Pubitemid 129697691)
13. M. Shur and M. Hack, "Physics of amorphous silicon based alloy fieldeffect transistors,"J. Appl.Phys., vol. 55, no. 10, pp. 3831-3842,May1984 (Pubitemid 14607731)
14. M. J. Powell, "The physics of amorphous-silicon thin-film transistors," IEEE Trans. Electron Devices, vol. 36, no. 12, pp. 2753-2763, Dec. 1989
15. G. Fortunato and P. Migliorato, "Determination of gap state density in polycrystalline silicon by field-effect conductance," Appl. Phys. Lett., vol. 49, no. 16, pp. 1025-1027, Oct. 1986
16. L. M. Terman, "An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes," Solid State Electron., vol. 5, no. 5, pp. 285-299, Sep./Oct. 1962
17. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York:Wiley, 1981
18. 4 thin-film transistors," Appl. Phys. Lett., vol. 92, no. 13, p. 133 512, Mar. 2008
19. M. Furuta, T. Nakanishi, M. Kimura, T. Hiramatsu, T. Matsuda, H. Furuta, T. Kawaharamura, C. Li, and T. Hirao, "Effect of surface treatment of gate-insulator on uniformity of bottom-gate ZnO thin film transistors," Electrochem. Solid-State Lett., vol. 13, no. 4, pp. H101-H104, 2010
20. M. Furuta, Y. Kamada, M. Kimura, T. Hiramatsu, T. Matsuda, H. Furuta, C. Li, S. Fujita, and T. Hirao, "Analysis of hump characteristics in thinfilm transistors with ZnO channels deposited by sputtering at various oxygen partial pressures," IEEE Electron Device Lett., vol. 31, no. 11, pp. 1257-1259, Nov. 2010
21. J. Nishii, F. M. Hossain, S. Takagi, T. Aita, K. Saikusa, Y. Ohmaki, I. Ohkubo, S. Kishimoto, A. Ohtomo, T. Fukumura, F. Matsukura, Y. Ohno, H. Koinuma, H. Ohno, and M. Kawasaki, "High mobility thin film transistors with transparent ZnO channels," Jpn. J. Appl. Phys., vol. 42, no. 4A, pp. L347-L349, Apr. 2003
22. S. Masuda, K. Kitamura, Y. Okumura, S. Miyatake, H. Tabata, and T. Kawai, "Transparent thin film transistors using ZnO as an active channel layer and their electrical properties," J. Appl. Phys., vol. 93, no. 3, pp. 1624-1630, Feb. 2003
23. D. H. Levy, D. Freeman, S. F. Nelson, P. J. Cowdery-Corvan, and L. M. Irving, "Stable ZnO thin film transistors by fast open air atomic layer deposition," Appl. Phys. Lett., vol. 92, no. 19, p. 192 101, May 2008
24. S. H. K. Park, C. S. Hwang, H. Y. Jeong, H. Y. Chu, and K. I. Cho, "Transparent ZnO-TFT arrays fabricated by atomic layer deposition," Electrochem. Solid-State Lett., vol. 11, no. 1, pp. H10-H14, 2008 (Pubitemid 350119809)
25. P. F. Carcia, R. S. McLean,M. H. Reilly, and G. Nunes, "Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering," Appl. Phys. Lett., vol. 82, no. 7, pp. 1117-1119, Feb. 2003
26. E. M. C. Fortunato, P. M. C. Barquinha, A. C.M. B. G. Pimentel, A. M. F. Gonçalves, A. J. S. Marques, R. F. P. Martins, and L. M. N. Pereira, "Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature," Appl. Phys. Lett., vol. 85, no. 13, pp. 2541-2543, Sep. 2004
27. M. Furuta, T. Hiramatsu, T. Matsuda, C. Li, H. Furuta, and T. Hirao, "Oxygen bombardment effects on average crystallite size of sputter-deposited ZnO films," J. Non-Cryst. Solids, vol. 354, no. 17, pp. 1926-1931, Apr. 2008
28. M. Kimura, S. W. B. Tam, S. Inoue, and T. Shimoda, "Extraction of trap densities at front and back interfaces in thin-film transistors," Jpn. J. Appl. Phys., vol. 43, no. 1, pp. 71-76, Jan. 2004
29. F. Oba, S. R. Nishitani, S. Isotani, H. Adachi, and I. Tanaka, "Energetics of native defects in ZnO," J. Appl.Phys., vol. 90, no. 2, pp. 824-828, Jul. 2001. (Pubitemid 33665808)