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-3 or higher leads to a depletion layer, width on the order of 10 nm or less. With less doping, the central portion is simply depleted and the n-portion is eliminated. In either case, only the p-portion of the channel contributes to the conduction.
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27
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4143147262
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ds while the channel-drain junction is in the Schottky reverse direction. This would result in very little conduction. If the channel is p-type, the source-channel junction is ohmic, and the channel-drain junction is in the Schottky forward direction, resulting in substantial conduction. Thus, we should expect significant contribution of conduction from the p-portion, but negligible from the n-portion of the p-VSG-FET, as shown schematically in Figure 4d.
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