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Volumn 4, Issue 7, 2004, Pages 1247-1252

Single crystal nanowire vertical surround-gate field-effect transistor

Author keywords

[No Author keywords available]

Indexed keywords

ZINC OXIDE;

EID: 4143108889     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl049461z     Document Type: Article
Times cited : (670)

References (30)
  • 2
    • 0003975428 scopus 로고    scopus 로고
    • European Commission Information Society Technologies Programme: Future and Emerging Technologies, Microelectronics Advanced Research Initiative
    • Compañó, R.; Molenkamp, L.; Paul, D.; J. Technology Roadmap for Nanoelectronics; European Commission Information Society Technologies Programme: Future and Emerging Technologies, Microelectronics Advanced Research Initiative; http://nanoworld.org/NanoLibrary/nanoroad.pdf.
    • J. Technology Roadmap for Nanoelectronics
    • Compañó, R.1    Molenkamp, L.2    Paul, D.3
  • 9
    • 4143102328 scopus 로고    scopus 로고
    • Ph.D. Thesis, Stanford University
    • Auth, C. P., Ph.D. Thesis, Stanford University, 1998.
    • (1998)
    • Auth, C.P.1
  • 14
    • 4143082447 scopus 로고    scopus 로고
    • Ph.D. Thesis, National University of Singapore
    • Ng, H. T., Ph.D. Thesis, National University of Singapore, 2001.
    • (2001)
    • Ng, H.T.1
  • 16
    • 4143110018 scopus 로고    scopus 로고
    • note
    • All calculations and geometry optimizations were performed using density functional theory (DFT) programs DMOL3 from Accelrys, Inc. The DFT exchange-correlation potential was evaluated within the generalized gradient approximation using Perdew-Wang-91 for correlation. A double numeric polarization basis set was used, and each basis function was restricted to a real space cutoff of 5.5 Å. The ZnO and SiC bulk crystals were first geometrically optimized to determine the equilibrium atomic positions and lattice constants. Next, (0001) planes of ZnO and SiC were cleaved, followed by construction of 3D periodic slabs where the top and bottom 3-5 layers respectively were constrained to mimic the presence of a semi-infinite crystalline material. Geometry optimization and interfacial interaction energy were then performed and calculated.
  • 20
    • 4143066728 scopus 로고    scopus 로고
    • note
    • A Cr wet etchant of 1:3 (by volume) of 0.0125 M sodium hydroxide to 0.001 M potassium hexacyanoferrate was used.
  • 22
    • 4143107781 scopus 로고    scopus 로고
    • note
    • 2 layer as discussed in ref 23, where the charge distributions are different in the n- and p-VSG-FETs.
  • 26
    • 4143102327 scopus 로고    scopus 로고
    • note
    • -3 or higher leads to a depletion layer, width on the order of 10 nm or less. With less doping, the central portion is simply depleted and the n-portion is eliminated. In either case, only the p-portion of the channel contributes to the conduction.
  • 27
    • 4143147262 scopus 로고    scopus 로고
    • note
    • ds while the channel-drain junction is in the Schottky reverse direction. This would result in very little conduction. If the channel is p-type, the source-channel junction is ohmic, and the channel-drain junction is in the Schottky forward direction, resulting in substantial conduction. Thus, we should expect significant contribution of conduction from the p-portion, but negligible from the n-portion of the p-VSG-FET, as shown schematically in Figure 4d.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.