Characteristics of gravure printed InGaZnO thin films as an active channel layer in thin film transistors

Thin Solid Films

Volumn 518, Issue 22, 2010, Pages 6249-6252

  Choi, Yuri ^a   Kim, Gun Hee ^a   Jeong, Woong Hee ^a   Kim, Hyun Jae ^a   Chin, Byung Doo ^b   Yu, Jae Woong ^c  

^a Yonsei University   (South Korea)

^b Dankook University   (South Korea)

^c Kyung Hee University   (South Korea)

Author keywords

Gravure print; IGZO; Oxide semiconductor; Thin film transistor

Indexed keywords

ACTIVE CHANNEL LAYERS; ACTIVE LAYER; AFM IMAGE; FIELD-EFFECT MOBILITIES; GRAVURE PRINT; GRAVURE PRINTING; IGZO; INDIUM GALLIUM ZINC OXIDES; OFF CURRENT; OXIDE SEMICONDUCTOR; PRINTING SPEED; ROOT MEAN SQUARE;

OFFSET PRINTING; REFRACTIVE INDEX; THIN FILM TRANSISTORS; THIN FILMS; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

GRAPHIC METHODS;

EID: 77956059016     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.04.006     Document Type: Conference Paper

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