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Volumn 96, Issue 19, 2010, Pages

The impact of SiNx gate insulators on amorphous indium-gallium-zinc oxide thin film transistors under bias-temperature- illumination stress

(10) Jung, Ji Sim a Son, Kyoung Seok a Lee, Kwang Hee a Park, Joon Seok a Kim, Tae Sang a Kwon, Jang Yeon a Chung, Kwun Bum b Park, Jin Seong b Koo, Bonwon a Lee, Sangyun a

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

b Dankook University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE FILMS; DEVICE RELIABILITY; FILM STRESS; GATE INSULATOR; H-BONDS; HYDROGEN CONTENTS; NEGATIVE SHIFT; RICH PHASE; ZINC OXIDE THIN FILMS;

AMORPHOUS FILMS; GALLIUM; HYDROGEN BONDS; SILICON NITRIDE; THIN FILM TRANSISTORS; THIN FILMS; ZINC; ZINC OXIDE;

INDIUM;

EID: 77953004199 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3429588 Document Type: Article

Times cited : (54)

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