Modulating the interface quality and electrical properties of HfTiO/InGaAs gate stack by atomic-layer-deposition-derived Al2O3 passivation layer

ACS Applied Materials and Interfaces

Volumn 6, Issue 24, 2014, Pages 22013-22025

  He, Gang ^a,c   Gao, Juan ^a   Chen, Hanshuang ^a   Cui, Jingbiao ^b   Sun, Zhaoqi ^a   Chen, Xiaoshuang ^c  

^a ANHUI UNIVERSITY   (China)

^b University of Memphis   (United States)

^c SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

atomic layer deposition; electrical properties; high k gate dielectric; metal oxide semiconductor; surface passivation

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMS; DIELECTRIC DEVICES; ELECTRIC PROPERTIES; GALLIUM COMPOUNDS; GATE DIELECTRICS; HIGH-K DIELECTRIC; INTERFACE STATES; LEAKAGE CURRENTS; LOGIC GATES; METALS; MOS CAPACITORS; OXIDE SEMICONDUCTORS; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

CURRENT CONDUCTION MECHANISMS; HIGH- K GATE DIELECTRICS; INTERFACE CONTROL LAYER; INTERFACE PASSIVATION LAYERS; INTERFACIAL PASSIVATION LAYERS; LOW-FREQUENCY DISPERSIONS; METAL OXIDE SEMICONDUCTOR; SURFACE PASSIVATION;

ATOMIC LAYER DEPOSITION;

EID: 84919935972     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am506351u     Document Type: Article

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