Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks

APL Materials

Volumn 1, Issue 1, 2013, Pages

  He, Gang ^a   Deng, Bin ^a   Chen, Hanshuang ^a   Chen, Xiaoshuang ^b   Lv, Jianguo ^c   Ma, Yongqing ^a   Sun, Zhaoqi ^a  

^a ANHUI UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c HEFEI NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84899996491     PISSN: None     EISSN: 2166532X     Source Type: Journal    
DOI: 10.1063/1.4808243     Document Type: Article

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34. See supplementary material at http://dx.doi.org/10.1063/1.4808243 E-AMPADS-1-002301 for the current paper reports the reduction and removal of surface native oxide from as-received InGaAs surface by using dimethylaluminumhydride-derived aluminum oxynitride (AlON) passivation layer prior to HfTiO deposition to solve Fermi level pinning issue. It has been found that complete consumption of native oxides of AsOx and GaOx at the InGaAs surface, but no effect to InOx, has been realized after MOCVD AlON at 300 °C. XPS observations of HfTiO/InGaAs gate stacks demonstrate that introducing AlON layer can suppress the regrowth of native oxide at the interface.