Charge trapping and current-conduction mechanisms of metal-oxide- semiconductor capacitors with LaxTay dual-doped HfON dielectrics

Solid-State Electronics

Volumn 54, Issue 10, 2010, Pages 1197-1203

  Cheng, Chin Lung ^a   Horng, Jeng Haur ^a   Chang Liao, Kuei Shu ^b   Jeng, Jin Tsong ^a   Tsai, Hung Yang ^a  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Charge trapping; Current conduction mechanisms; Dual doped; HfLaTaON dielectric; Metal oxide semiconductor (MOS)

Indexed keywords

C-V MEASUREMENT; CHARGE CURRENT; CURRENT CONDUCTION; CURRENT-VOLTAGE MEASUREMENTS; DUAL-DOPED; ELECTRICAL AND RELIABILITY CHARACTERISTICS; ELECTRICAL FIELD; FOWLER-NORDHEIM; FRENKEL-POOLE EMISSION; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE- SEMICONDUCTORCAPACITORS; NEGATIVE CHARGE; POSITIVE CHARGES; POST DEPOSITION ANNEALING; SCHOTTKY EMISSIONS; STRESS-INDUCED LEAKAGE CURRENT; TRAP ENERGY LEVELS;

CAPACITANCE; CAPACITORS; CHARGE TRAPPING; GATE DIELECTRICS; GATES (TRANSISTOR); METALS; MOS CAPACITORS; POLYPEPTIDES; TANTALUM;

DIELECTRIC MATERIALS;

EID: 77955430590     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.05.010     Document Type: Article

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