Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer

IEEE Electron Device Letters

Volumn 32, Issue 2, 2011, Pages 122-124

  Ji, F ^a,b   Xu, J P ^a   Lai, P T ^c   Li, C X ^c   Liu, J G ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b Wuhan Polytechnic   (China)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Ge MOS; high k; TaON GeON; Terms Dual interlayer

Indexed keywords

CAPACITANCE-EQUIVALENT THICKNESS; DEVICE RELIABILITY; ELECTRICAL PROPERTY; GATE LEAKAGE CURRENT DENSITY; GE MOS; HIGH K; HIGH-K DIELECTRIC; INTERFACE QUALITY; INTERFACE STATE DENSITY; INTERFACIAL PROPERTY; N CONTENT; TAON/GEON; TERMS-DUAL INTERLAYER;

CAPACITORS; ELECTRIC PROPERTIES; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; HAFNIUM; LEAKAGE CURRENTS;

MOS CAPACITORS;

EID: 79151480537     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2092749     Document Type: Article

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