Metal gate- HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers

Applied Physics Letters

Volumn 89, Issue 22, 2006, Pages

  Kim, Hyoung Sub ^a   Ok, Injo ^a   Zhang, Manhong ^a   Lee, Tackhwi ^a   Zhu, Feng ^a   Yu, Lu ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

CAPACITANCE VOLTAGE CHARACTERISTICS; FREQUENCY DISPERSION; INTERFACIAL PASSIVATION LAYERS (IPLS);

MOS CAPACITORS;

EID: 33751561931     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2396912     Document Type: Article

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