GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivation

Applied Physics Letters

Volumn 90, Issue 25, 2007, Pages

  Gao, Fei ^a,b,c   Lee, S J ^a   Chi, D Z ^c   Balakumar, S ^b   Kwong, D L ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; GATE DIELECTRICS; HAFNIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDATION; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE;

CAPACITANCE-VOLTAGE CHARACTERISTICS; FERMI LEVEL PINNING; GATE STACK;

MOS DEVICES;

EID: 34547285895     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2749840     Document Type: Article

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