Impact of atomic layer deposition temperature on HfO 2/InGaAs metal-oxide-semiconductor interface properties

Journal of Applied Physics

Volumn 112, Issue 8, 2012, Pages

  Suzuki, Rena ^a   Taoka, Noriyuki ^a   Yokoyama, Masafumi ^a   Kim, Sang Hyeon ^a   Hoshii, Takuya ^a   Maeda, Tatsuro ^b   Yasuda, Tetsuji ^b   Ichikawa, Osamu ^c   Fukuhara, Noboru ^c   Hata, Masahiko ^c   Takenaka, Mitsuru ^a   Takagi, Shinichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; C-V CHARACTERISTIC; ELECTRICAL CHARACTERISTIC; INTERFACE PROPERTY; INTERFACE STRUCTURES; INTERFACE TRAP DENSITY; METAL-OXIDE-SEMICONDUCTOR INTERFACES; MOS INTERFACE; TEMPERATURE DEPENDENCE; THEORETICAL RESULT;

ALUMINUM; DIELECTRIC DEVICES; GALLIUM; HAFNIUM OXIDES; PASSIVATION; SEMICONDUCTING INDIUM;

ATOMIC LAYER DEPOSITION;

EID: 84868379225     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4759329     Document Type: Article

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